BUH1015

® BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS 3 3 2 1 DESCRIPTION The BUH1015 and BUH1015HI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. 2 1 TO-218 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CBO V CEO VEBO IC I CM IB I BM P tot T s tg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) T otal Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction T emperature o Valu e 1500 700 10 14 18 8 11 160 -65 to 150 150 70 Un it V V V A A A A W o o C C 1/8 December 1999 BUH1015/BUH1015HI THERMAL DATA TO -218 ISOW AT T218 R t hj-ca se Thermal Resistance Junction-case Max 0.78 1.8 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 Tj = 125 o C Min. Typ . Max. 0.2 2 100 Un it mA mA µA V V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat )∗ V BE(s at)∗ hFE∗ Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain RESISTIVE LO AD Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime I E = 10 mA I C = 10 A I C = 10 A I C = 10 A I C = 10 A IB = 2 A IB = 2 A V CE = 5 V V CE = 5 V 10 1.5 1.5 7 5 10 14 V V V T j = 100 C o ts tf ts tf V CC = 400 V I B1 = 2 A I C = 10 A I B1 = 2 A IC = 10 A I B2 = -6 A 1.5 110 4 220 µs ns µs ns f = 31250 Hz IB2 = -6 A π  V c eflybac k = 1200 sin 106 t V 5  ts tf ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % IC = 6 A f = 64 KHz I B1 = 1 A V beo ff = - 2 V π  V c eflybac k = 1100 sin 106 t 5   3.7 200 V µs ns Safe Operating Area For TO-218 Safe Operating Area For ISOWATT218 2/8 BUH1015/BUH1015HI Thermal Impedance for TO-218 Thermal Impedance for ISOWATT218 Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/8 BUH1015/BUH1015HI Power Losses at 64 KHz Switching Time Inductive Load at 64KHz (see figure 2) Reverse Biased SOA BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at Tj = 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided the transistor to turn off (retrace phase). Most of the dissipation, especially in the deflection application, occurs at switch-off so it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, T j. A new set of curves have been defined to give total power losses, ts and tf as a function of IB1 at 64 KHz scanning frequencies for choosing the optimum drive. The test circuit is illustrated in figure 1. The values of L and C are calculated from the following equations: 1 1 L (IC)2 = C (VCEfly)2 2 2 1 ω = 2 πf = L  √C Where IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace. 4/8 BUH1015/BUH1015HI Figure 1: Inductive Load Switching Test Circuits. Figure 2: Switching Waveforms in a Deflection Circuit 5/8 BUH1015/BUH1015HI TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R Ø – 4 3.95 31 12.2 4.1 – 0.157 0.5 1.1 10.8 14.7 – 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 – 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H ¯ F R 1 2 3 P025A 6/8 G BUH1015/BUH1015HI ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA mm TYP. inch TYP. MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 21.20 19.90 23.60 42.50 5.25 20.75 2.3 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 0.819 0.752 0.898 1.594 0.191 0.797 0.083 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.835 0.783 0.929 1.673 0.207 0.817 0.091 9 0.354 4.6 3.5 3.7 0.138 0.181 0.146 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm P025C/A 7/8 BUH1015/BUH1015HI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 8/8