BUH2M20AP

® BUH2M20AP HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s EXTRA HIGH VOLTAGE CAPABILITY LOW OUTPUT CAPACITANCE CHARACTERIZED FOR LINEAR MODE OPERATION. s APPLICATIONS: DESIGNED SPECIFICALLY FOR DYNAMIC FOCUS IN CTV AND MONITOR. DESCRIPTION The BUH2M20AP is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p < 5 m s) Total Dissipation at T c = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 2000 1200 5 30 40 20 -65 to 150 150 Unit V V V mA mA W o o C C September 1998 1/4 BUH2M20AP THERMAL DATA R thj-case Thermal Resistance Junction-case Max 6.25 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO VCEO V EBO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ C ob Parameter Collector Cut-off Current (I E = 0 ) Emitter Cut-off Current (I C = 0 ) Collector-Emitter Breakdown Voltage Emitter-Base Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Output Capacitance Test Conditions V CE = 2 000 V V EB = 4 V IC = 1 mA IE = 10 µA IC = 2 mA IC = 2 mA IC = 2 mA I C = 1 0 mA V CB = 1 00 V I B = 4 00 µ A I B = 4 00 µ A V CE = 1 0 V V CE = 1 0 V IC = 0 f = 1 MHz 10 10 3 pF 1200 5 5 2 Min. Typ. Max. 5 10 Unit µA µA V V V V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/4 BUH2M20AP TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 3/4 BUH2M20AP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 4/4