BUH615D

® BUH615D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) 3 2 1 s APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BUH615D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p < 5 m s) Base Current Base Peak Current (t p < 5 m s) Total Dissipation at T c = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 1500 700 5 8 12 5 8 55 -65 to 150 150 Unit V V V A A A A W o o C C 1/4 December 1999 BUH615D THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.3 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ ts tf ts tf Parameter Collector Cut-off Current (V BE = 0 ) Emitter Cut-off Current (I C = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time Test Conditions V CE = 1 500 V V CE = 1 500 V V EB = 5 V IC = 6 A IC = 6 A IC = 6 A I B = 2 .5 A I B = 2 .5 A V CE = 5 V IC = 6 A I B2 = - 3 A 4 2.7 190 2.3 350 T j = 1 25 o C Min. Typ. Max. 0.2 2 300 1.5 1.3 9 3.9 280 µs ns µs ns Unit mA mA mA V V V CC = 4 00 V I B1 = 1 .5 A IC = 6 A I B1 = 1 .25 A V ceflyback f = 1 5625 Hz I B2 = - 3 A  π = 1 050 sin  1 06 t 10   V ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 6 A I B1 = 1 .5 A V ceflyback f = 3 1250 Hz I B2 = - 3 A  π = 1 200 sin  1 06 t V 5   2.3 200 µs ns Vf Diode Forward Voltage IF = 5 A 2 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 BUH615D ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA mm TYP. inch TYP. MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 21.20 19.90 23.60 42.50 5.25 20.75 2.3 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 0.819 0.752 0.898 1.594 0.191 0.797 0.083 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.835 0.783 0.929 1.673 0.207 0.817 0.091 9 0.354 4.6 3.5 3.7 0.138 0.181 0.146 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm P025C/A 3/4 BUH615D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 4/4