BUL1102EFP

BUL1102E High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Very high switching speed TAB Applications Four lamp electronic ballast for: 3 3 ■ 120 V mains in push-pull configuration ■ 277 V mains in half bridge current feed configuration 1 2 2 1 TO-220FP TO-220 Description This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Figure 1. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast. Table 1. Internal schematic diagram C (2, TAB) E (3) (1) B Device summary Order codes Marking Package Packaging BUL1102E BUL1102E TO-220 Tube BUL1102EFP BUL1102EFP TO-220FP Tube February 2012 Doc ID 7929 Rev 5 1/13 www.st.com 13 Absolute maximum ratings 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 1100 V VCEO Collector-emitter voltage (IB = 0) 450 V VEBO Emitter-base voltage (IC = 0) 12 V Collector current 4 A Collector peak current (tP < 5 ms) 8 A Base current 2 A Base peak current (tP < 5 ms) 4 A PTOT BUL1102E total dissipation at TC = 25°C BUL1102EFP total dissipation at TC = 25 °C 70 30 W VISO BUL1102EFP insolation withstand voltage (RMS) from all three leads to external heatsink 1500 V TSTG Storage temperature -65 to 150 °C 150 °C Value Unit BUL1203E thermal resistance junction-case 1.8 °C/W BUL1203EFP thermal resistance junction-case 4.2 °C/W IC ICM IB IBM TJ Table 3. Symbol RthJC 2/13 BUL1102E Max. operating junction temperature Thermal data Parameter Doc ID 7929 Rev 5 BUL1102E 2 Electrical characteristics Electrical characteristics (TJ = 25 °C; unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions ICES Collector cut-off current (VBE = 0) VCE =1100 V IEBO Emitter cut-off current (IC = 0) VEB = 12 V Collector-emitter VCEO(sus)(1) sustaining voltage (IB=0) IC = 100 mA Collector-emitter saturation voltage IC = 2 A VBE(sat)(1) Base-emitter saturation voltage IC = 2 A DC current gain IC = 250 mA_ VCE = 5 V VCE = 5 V IC = 2 A, for BUL1102E VCE = 5 V IC = 2 A_ for BUL1102EFP hFE(1) ts tf Ear 100 µA 1 mA 450 VCE(sat)(1) _ Min. Typ. Max. Unit V IB =400 mA 1.5 V IB = 400 mA 1.5 V Resistive load Storage time Fall time IC = 2.5 A VCC = 250 V IB1 = 0.5 A IB2 = 1 A TP=30 µs (see Figure 14) Avalanche energy L = 2 mH C = 1.8 nF IBR ≤ 2.5 A 25 °C < TC