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BUL1403ED
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED ARCING TEST SELF PROTECTED TO-220
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APPLICATIONS s 2/4 LAMPS ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING 277 VAC PUSH-PULL CONFIGURATION DESCRIPTION The BUL1403ED is a new device, designed for fluorescent electronic ballast 277 VAC push-pull applications (up to 4 lamps). This device, it can be used without baker clamp and transil protection, reducing greatly the component count.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 o C St orage Temperature Max. Operating Junction Temperature Value 1400 650 7 3 6 2 4 80 -65 to 150 150 Uni t V V V A A A A W
o o
C C
June 1999
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BUL1403ED
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.56 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I EBO V CEO(sus) Parameter Collector Cut-off Current (V BE = 0) Base-Emitt er Leakage Current Collector-Emitter Sustaining Voltage (I B = 0) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain Test Cond ition s V CE = 1400 V V EB = 7 V I C = 10 mA L = 25 mH 650 Min. Typ . Max. 1 100 Un it mA µA V
V CE(sat )∗ V BE(s at)∗
I C = 0.5 A I C = 0.25 A I C = 0.5 A IC = 1 A IC = 2 A I C = 5 mA I C = 0.4 A I C = 0.8 A I C = 0.5 A I B1 = 0.05 A D.C. = 2% L = 2 mH
IB = 0.05 A I B = 0.025 A IB = 0.1 A I B = 0.1 A I B = 0.4 A V CE = 10 V VCE = 3 V VCE = 5 V VCC = 125 V I B2 = -0.25 A P. W. = 300 µ s 6 18 15 4
2.5 1.5 1.0 1.1 1.2
V V V V V
h F E∗
td tr ts tf E sb
RESISTIVE LO AD Delay Time Rise Time Storage Time Fall Time Repetitive Avalanche Energy
0.3 0.8 1.2 0.35
µs µs µs µs mJ
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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BUL1403ED
Safe Operating Areas Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
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BUL1403ED
Reverse Biased SOA
Resistive Load Switching Test Circuit
Energy Rating Test Circuit
Vcc L=2mH Rg T1 Vin Tp
SC12620
C
TUT Vbb
+
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BUL1403ED
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
P011C
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BUL1403ED
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com .
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