BUL382D

BUL381D BUL382D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s s s s SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 1 2 3 APPLICATIONS s ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL381D and BUL382D are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value 800 400 9 5 8 2 4 70 -65 to 150 150 Uni t V V V A A A A W o o C C July 1997 1/6 BUL381D / BUL382D THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO V CEO(sus) V EBO V CE(sat )∗ Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Collector-Emitter Sustaining Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain RESISTIVE LO AD ts ts tf ts tf Vf Storage Time Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime Diode Forward Voltage Test Cond ition s V CE = 800 V V CE = 800 V V CE = 400 V I C = 100 mA I E = 10 mA IC = 1 A IC = 2 A IC = 3 A IC = 1 A IC = 2 A IB = 0.2 A IB = 0.4 A IB = 0.75 A IB = 0.2 A IB = 0.4 A 8 10 L = 25 mH 400 9 0.5 0.7 1.1 1.1 1.2 Tj = 125 oC Min. Typ . Max. 100 500 250 Un it µA µA µA V V V V V V V V BE(s at)∗ h FE∗ I C = 2 A VCE = 5 V I C = 10 mA V CE = 5 V IC = 2 A V CC = 250 V tp = 30 µ s I B1 = 0.4 A IB2 = -0.4 V for BUL381D for BUL382D for all IC = 2 A V BE(of f) = -5 V V CL = 250 V T j = 125 o C IC = 2 A IB1 = 0.4 A R BB = 0 Ω L = 200 µ H 1.5 2 2.5 3 0.8 1.3 100 2.5 µs µs µs µs µs V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Areas Derating Curve 2/6 BUL381D / BUL382D DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6 BUL381D / BUL382D Reverse Biased SOA Resistive Load Switching Test Ciurcuit RBSOA and Inductive Load Switching Test Circuits 1) Fast electronic switch 2) Non-inductive Resistor 1) F ast electronic switch 2) Non-inductive Resistor 3) F ast recovery rectifier 4/6 BUL381D / BUL382D TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 E mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 A C D1 L2 F1 D G1 Dia. F2 F L5 L7 L6 L9 L4 G H2 P011C 5/6 BUL381D / BUL382D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 6/6