BUL38D

® BUL38D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC HIGH RUGGEDNESS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 1 2 TO-220 APPLICATIONS ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES s DESCRIPTION The BUL38D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature o Value 800 450 9 5 10 2 4 80 -65 to 150 150 Unit V V V V A A A W o o C C February 2003 1/7 BUL38D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.56 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0 ) Collector Cut-off Current (I B = 0 ) Test Conditions V CE = 8 00 V V CE = 8 00 V V CE = 4 50 V I C = 1 00 mA L = 25 mH 450 T c = 1 25 o C Min. Typ. Max. 100 500 250 Unit µA µA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat) ∗ Emitter-Base Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I E = 1 0 mA IC = 1 A IC = 2 A IC = 3 A IC = 1 A IC = 2 A I C = 1 0 mA I C = 0 .5 A IC = 2 A Group A Group B I C = 2 .5 A I B1 = - IB2 = 0 .5 A (see figure 2) IC = 2 A V BE(off) = -5 V V CL = 250 V (see figure 1) IC = 2 A V BE(off) = -5 V V CL = 250 V T c = 125 o C IC = 2 A I B = 0 .2 A I B = 0 .4 A I B = 0 .75 A I B = 0 .2 A I B = 0 .4 A V CE = 5 V V CE = 5 V V CE = 5 V 9 0.5 0.7 1.1 1.1 1.2 10 60 13 22 V CC = 1 50 V t p = 30 µ s I B1 = 0 .4 A R BB = 0 Ω L = 200 µ H I B1 = 0 .4 A R BB = 0 Ω L = 200 µ H (see figure 1) 1.0 23 32 2.2 0.8 1 55 1.8 100 V V V V V V V BE(sat) ∗ h FE ∗ ts tf ts tf RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time Diode Forward Voltage µs µs µs ns ts tf Vf 1.3 100 1 .5 µs ns V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. The product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails. 2/7 BUL38D Safe Operating Area Derating Curve DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/7 BUL38D Inductive Load Storage Time Inductive Load Fall Time Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier 4/7 BUL38D Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BUL38D TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 P011CI 6/7 BUL38D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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