BUL39D

® BUL39D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES s 3 1 2 DESCRIPTION The BUL39D is manufactured using high voltage Multi Epitaxial Planar technology to enhance switching speeds while maintaining wide RBSOA. The BUL series is designed for use in electronics transformers for halogen lamps. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 850 450 9 4 8 2 4 70 -65 to 150 150 Unit V V V A A A A W o o C C August 2001 1/6 BUL39D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = 8 50 V V CE = 8 50 V V EB = 9 V I C = 1 00 mA L = 25 mH 450 T j = 1 25 o C Min. Typ. Max. 100 500 100 Unit µA µA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V CE(sat) ∗ V BE(sat) ∗ h FE ∗ V CEW Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Maximum Collector Emitter Voltage Without Snubber INDUCTIVE LOAD Storage Time Fall Time Diode Forward Voltage IC = 1 A I C = 2 .5 A IC = 1 A I C = 2 .5 A IC = 5 A I C = 1 0 mA IC = 6 A V BB = - 2.5 V tp = 10 µs I C = 2 .5 A V BE(off) = -5 V V CL = 300 V IC = 2 A I B = 0 .2 A I B = 0 .5 A I B = 0 .2 A I B = 0 .5 A V CE = 1 0 V V CE = 5 V R BB = 0 Ω L = 50 µ H I B(on) = 0 .5 A R BB = 0 Ω L = 1 mH 4 10 450 0.13 0.5 1.1 1.1 1.3 V V V V V ts tf Vf 0.7 50 1.5 100 1 .5 µs ns V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/6 BUL39D Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/6 BUL39D Inductive Fall Time Inductive Storage Time Reverse Biased SOA 4/6 BUL39D TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 P011CI 5/6 BUL39D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6