BUL3N7

BUL3N7 MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Features ■ ■ ■ ■ MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 2 3 Applications ■ 1 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING TO-220 Description The BUL3N7 is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is expressly designed for a new solution to be used in compact fluorescent lamps, H.F. ballast voltage FED where it is coupled with the BUL3P5, its complementary PNP transistor. Internal Schematic Diagram Order Codes Part Number BUL3N7 Marking BUL3N7 Package TO-220 Packing TUBE December 2005 rev.1 1/10 www.st.com 10 1 Absolute Maximum Ratings BUL3N7 1 Table 1. Symbol VCES VCEO VEBO IC ICM IB IBM PTOT Tstg TJ Absolute Maximum Ratings Absolute Maximum Rating Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0, IB = -0.75 A, tp < 100ms, Tj < 150°C) Collector Current Collector Peak Current (tP < 5ms) Base Current Base Peak Current (tP < 5ms) Total dissipation at Tc = 25°C Storage Temperature Max. Operating Junction Temperature Value 700 400 V(BR)EBO 3 6 1.5 3 60 -65 to 150 150 Unit V V V A A A A W °C °C Table 2. Symbol RthJ-case RthJ-amb Thermal Data Parameter Thermal Resistance Junction-Case_______________Max Thermal Resistance Junction-Ambient ______ ______Max Value 2.08 62.5 Unit °C/W °C/W 2/10 BUL3N7 2 Electrical Characteristics 2 Table 3. Symbol ICES Electrical Characteristics Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Parameter Collector Cut-off Current (V BE = 0) Test Conditions VCE = 700 V VCE = 700 V__ __TC = 125°C 10 400 0.5 0.5 1.1 1.2 1.3 10 18 4 Min. Typ. Max. 0.1 0.5 18 Unit mA mA V V V V V V V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 mA (IC = 0) VCEO(sus) Collector-Emitter Note: 1 Sustaining Voltage (IB = 0) VCE(sat) Note: 1 VBE(sat) Note: 1 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 100 mA IC = 0.7 A __ _ IB = 0.1A IC = 1 A __ _ IB = 0.2 A IC = 0.5A ____ IB = 0.1 A IC = 1A _____ IB = 0.2 A IC = 2A _____ IB = 0.4 A IC = 10 mA _ VCE = 5 V hFE DC Current Gain IC = 0.7A ____ VCE = 5 V IC = 2A_ VCE = 5 V IC = 0.7 A ___ V CC = 250 V 34 tr ts tf ts tf RESISTIVE LOAD Rise Time Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time IB1 = 0.14 A __ IB2 = -0.14 A Tp = 30 µs IC = 1 A ____ VBE(off) = -5 V L = 1 mH IB1 = 0.2 A Rbb = 0 Ω Vclamp = 200 V 80 2.4 100 450 120 ns µs ns ns ns Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5%. 3/10 2 Electrical Characteristics BUL3N7 2.1 Typical Characteristics Safe Operating Area Figure 2. DC Current Gain Figure 1. Figure 3. DC Current Gain Figure 4. Collector Emitter Saturation Voltage Figure 5. Base Emitter Saturation Voltage Figure 6. Switching Times Resistive Load 4/10 BUL3N7 Figure 7. Switching Times Inductive Load Figure 8. 2 Electrical Characteristics Reverse Bised SOA 5/10 3 Test Circuits BUL3N7 3 Figure 9. Test Circuits Inductive Load Switching Test Circuit 1) Fast Electronic Switching 2) Non-inductive Resisitor 3) Fast Recovery Rectifier Figure 10. Resistive Load Switching Test Circuits 1) Fast Electronic Switching 2) Non-inductive Resisitor 6/10 BUL3N7 4 Package Mechanical Data 4 Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 4 Package Mechanical Data BUL3N7 TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 8/10 BUL3N7 5 Revision History 5 Revision History Date 09-Dec-2005 Revision 1 Initial Relase Changes 9/10 5 Revision History BUL3N7 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10