BUL3P5

BUL3P5 MEDIUM VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR Features ■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED u d o Applications ■ ) s ( ct r P e ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 1 2 3 TO-220 t e l o Description The BUL3P5 is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. ) (s It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. s b O Internal Schematic Diagram t c u The device is expressly designed for a new solution to be used in compact fluorescent lamps, H.F. ballast voltage FED where it is coupled with the BUL3N7, its complementary NPN transistor. d o r P e t e l o s b O Order Codes Part Number Marking Package Packing BUL3P5 BUL3P5 TO-220 TUBE December 2005 rev.2 1/10 www.st.com 10 BUL3P5 1 Absolute Maximum Ratings 1 Absolute Maximum Ratings Table 1. Absolute Maximum Rating Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) -500 V VCEO Collector-Emitter Voltage (IB = 0) -400 V VEBO Emitter-Base Voltage (IC = 0, IB = -0.75 A, tp < 100ms, Tj < 150°C) V(BR)EBO V Collector Current -3 A Collector Peak Current (tP < 5ms) -6 IC ICM IB Base Current Base Peak Current (tP < 5ms) PTOT Total dissipation at Tc = 25°C Tstg Storage Temperature TJ ro Thermal Data Symbol RthJ-case RthJ-amb Parameter ) (s t c u d o r P e s b O 2/10 P e s b O t e l o Thermal Resistance Junction-Case_______________Max Thermal Resistance Junction-Ambient ______ ______Max t e l o ct du -3 Max. Operating Junction Temperature Table 2. A -1.5 IBM (s) A A 60 W -65 to 150 °C 150 °C Value Unit 2.08 62.5 °C/W °C/W BUL3P5 2 2 Electrical Characteristics Electrical Characteristics Table 3. Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Symbol ICES Parameter Test Conditions VCE = -500 V__ VCEO(sus) Collector-Emitter Note: 1 Sustaining Voltage (IB = 0) Note: 1 VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage tf IC = -0.5A ____ IB = -0.1 A IC = -1A _____ IB = -0.2 A IC = -0.7A _ __ VCE = -5 V IC = -2A_ VCE = -5 V r P e )- s b O IC = -0.7 A ___ VCC = -250 V s ( t c u d o tf mA mA -10 V V IC = -0.7 A __ _ IB = -0.1A IC = -1 A __ _ IB = -0.2 A e t e ol DC Current Gain INDUCTIVE LOAD Storage Time Fall Time ts -0.1 -0.5 -400 IC = -2A _____ IB = -0.4 A RESISTIVE LOAD Rise Time Storage Time Fall Time ts Unit -5 IC = -10 mA __ VCE = -5 V tr Max. __TC = 125°C IC = 100 mA Note: 1 hFE Typ. VCE = -500 V Collector Cut-off Current (V BE = 0) V(BR)EBO Emitter-Base Breakdown Voltage IE = -10 mA (IC = 0) VCE(sat) Min. IB1 = -0.14 A __ IB2 = 0.14 A Tp = 30 µs IC = -1 A ____ IB1 = -0.2 A VBE(off) = 5 V Rbb = 0 Ω L = 1 mH Vclamp = 200 V ) s ( ct u d o Pr 10 18 4 -0.5 -0.5 V V -1.1 -1.2 -1.3 V V V 34 100 2.4 80 ns µs ns 450 70 ns ns t e l o Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5%. s b O 3/10 BUL3P5 2 Electrical Characteristics 2.1 Typical Characteristics Figure 1. Safe Operating Area Figure 2. DC Current Gain ) s ( ct Figure 3. DC Current Gain Figure 4. u d o r P e Collector Emitter Saturation Voltage t e l o ) (s s b O t c u d o r o s b O 4/10 P e let Figure 5. Base Emitter Saturation Voltage Figure 6. Switching Times Resistive Load BUL3P5 Figure 7. 2 Electrical Characteristics Switching Times Inductive Load Figure 8. Reverse Bised SOA ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 5/10 BUL3P5 3 Test Circuits 3 Test Circuits Figure 9. Inductive Load Switching Test Circuit ) s ( ct u d o r P e 1) Fast Electronic Switching 2) Non-inductive Resisitor 3) Fast Recovery Rectifier t e l o s b O Figure 10. Resistive Load Switching Test Circuits ) (s t c u d o r P e t e l o s b O 1) Fast Electronic Switching 2) Non-inductive Resisitor 6/10 BUL3P5 4 4 Package Mechanical Data Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 7/10 BUL3P5 4 Package Mechanical Data TO-220 MECHANICAL DATA mm. DIM. MIN. TYP TYP. MAX. 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 F 1.23 1.32 0.048 H1 6.20 6.60 0.244 J1 2.40 2.72 0.094 L 13 14 0.511 u d o L1 3.50 3.93 0.137 L20 16.40 L30 28.90 3.75 3.85 Q 2.65 2.95 d o r P e t e l o 0.202 0.052 r P e t e l o s b O øP t c u 8/10 MIN. A ) (s s b O inch MAX. 0.256 0.107 0.551 0.154 0.645 1.137 0.147 0.151 0.104 0.116 ) s ( ct BUL3P5 5 5 Revision History Revision History Date Revision 09-Dec-2005 2 Changes Inserted curves ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 9/10 BUL3P5 5 Revision History ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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