BUL416_05

BUL416 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n STMicroelectronics PREFERRED SALES TYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED FULLY CHARACTERISEZ AT 125 oC LOW SPREAD OF DYNAMIC PARAMETERS Figure 1: Package n n n n n APPLICATIONS n 3 ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES TO-220 1 2 n Figure 2: Internal Schematic Diagram DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. Table 1: Order Codes Part Number BUL416 # See:note on page 2 Marking BUL416A or (#) BUL416B Package TO-220 Packaging Tube Table 2: Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) Total Dissipation at TC = 25 C Storage Temperature o Value 1600 800 9 6 9 5 8 110 -65 to 150 Rev. 3 Unit V V V A A A A W °C 1/8 January 2005 BUL416 Symbol TJ Parameter Max. Operating Junction Temperature Value 150 Unit °C Table 3: Thermal Data Rthj-case Rthj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.14 62.5 o o C/W C/W Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICES ICEO Parameter Test Conditions Tj = 125 oC Min. Typ. Max. 100 500 250 L = 25 mH 800 Unit µA µA µA V Collector Cut-off Current VCE = 1600 V (VBE =0 V) V = 1600 V CE Collector Cut-off Current VCE = 800 V (IB = 0) IC = 100 mA VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0 ) VEBO VCE(sat)* VBE(sat)* hFE* Emitter-Base Voltage (IC = 0 ) Collector-Emitter Saturation Voltage IE = 10 mA IC = 2 A IC = 4 A IB = 0.4 A IB = 1.33 A IB = 0.4 A IB = 1.33 A VCE = 5 V VCE = 5 V 9 1.5 3 1.2 1.5 10 12 25 IB1 = 1 A RBB = 0 W L = 200 µH IB1 = 1 A RBB = 0 W L = 200 µH (see figure 12) 3 680 2.3 650 27 40 V V V V V Base-Emitter Saturation IC = 2 A Voltage IC = 4 A DC Current Gain IC = 10 mA IC = 0.7 A Group A INDUCTIVE LOAD Group B IC = 3 A VBE(off) = -5 V Vclamp = 200 V (see figure 12) IC = 3 A VBE(off) = -5 V Vclamp = 200 V ts tf Storage Time Fall Time INDUCTIVE LOAD µs ns ts tf Storage Time Fall Time µs ns Tj = 100 oC * Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %. # Note: Product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails. 2/8 BUL416 Figure 3: Safe Operating Area Figure 6: Derating Curve Figure 4: DC Current Gain Figure 7: DC Current Gain Figure 5: Collector-Emitter Saturation Voltage Figure 8: Base-Emitter Saturation Voltage 3/8 BUL416 Figure 9: Inductive Load Fall Time Figure 11: Resistive Load Stoarage Time Figure 10: Reverse Biased SOA 4/8 BUL416 Figure 12: Inductive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier 5/8 BUL416 TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 6/8 BUL416 Table 5: Version 14-Jan-2004 09-Sep-2004 26-Jan-2005 Release Date 1 2 3 First Release. Second Release. Third Release. Change Designator 7/8 BUL416 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8