BUL510

BUL510 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC ) s ( ct u d o APPLICATIONS ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES ■ ELECTRONIC TRANSFORMER FOR HALOGEN LAMP e t e l DESCRIPTION The BUL510 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. 1 TO-220 o s b O ) s ( t c Pr 3 2 INTERNAL SCHEMATIC DIAGRAM u d o r P e t e l o s b O ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CES Collector-Emitter Voltage (V BE = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) IC I CM IB Value Unit 1000 V 450 V 9 V Collector Current 10 A Collector Peak Current (t p < 5 ms) 18 A Base Current 3.5 A I BM Base Peak Current (t p < 5 ms) 7 A P tot Total Dissipation at T c = 25 o C 100 W T stg Storage Temperature Tj Max. Operating Junction Temperature February 2003 -65 to 150 o C 150 o C 1/6 BUL510 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.25 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0) V CE = 1000 V V CE = 1000 V I CEO Collector Cut-off Current (I B = 0) V CE = 450 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 100 mA L = 25 mH I E = 10 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 3 A IC = 4 A IC = 5 A I B = 0.6 A I B = 0.8 A I B = 1.25 A V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 3 A IC = 5 A I B = 0.6 A I B = 1.25 A DC Current Gain IC = 1 A I C = 10 mA V CE = 5 V V CE = 5 V ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 4 A I B1 = 0.8 A L = 200 µH ts tf INDUCTIVE LOAD Storage Time Fall Time h FE ∗ u d o ) s ( ct IC = 4 A I B1 = 0.8 A L = 200 µH s b O 2/6 Unit 100 500 µA µA 250 µA (s) V 9 o s b -O V CL = 300 V I B2 = -1.6 A V CL = 300 V I B2 = -1.6 A T c = 125 o C Derating Curve t c u d o r P e let r P e Safe Operating Areas Max. 450 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % t e l o Typ. T c = 125 o C Emitter-Base Voltage (I C = 0) V EBO Min. 15 10 V 0.8 1 1.5 V V V 1.2 1.5 V V 45 2.2 80 3 120 3.4 150 µs ns µs ns BUL510 DC Current Gain DC Current Gain ) s ( ct u d o r P e Collector Emitter Saturation Voltage Base Emitter Saturation Voltage t e l o ) (s s b O t c u d o r P e s b O t e l o Inductive Fall Time Inductive Storage Time 3/6 BUL510 Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuits (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier r P e u d o t e l o ) (s t c u d o r P e t e l o s b O 4/6 s b O ) s ( ct BUL510 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 F2 1.14 1.70 0.044 G 4.95 5.15 0.194 G1 2.40 2.70 0.094 H2 10.00 10.40 0.394 L2 L4 16.40 ) s ( ct 0.067 0.067 0.202 du o r P 0.106 0.409 13.00 0.645 14.00 0.511 e t e l 0.551 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 M O ) 2.60 DIA. o s b 3.75 3.85 0.147 0.116 0.102 0.151 s ( t c u d o r P e t e l o s b O P011CI 5/6 BUL510 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6