®
BUL57 BUL57FP
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
s
s s s s
s s s s
STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTORS HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC LARGE RBSOA TO-220FP FULLY ISOLATED PACKAGE (U.L. COMPLIANT)
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2
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1 2
3
TO-220
TO-220FP
APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES DESCRIPTION The devices are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds. The devices are designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter BUL57 Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) o Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature 700 400 9 8 16 4 7 85 -65 to 150 150 35 Value BUL57FP V V V A A A A W o C o C 1/7 Uni t
January 1999
BUL57 / BUL57FP
THERMAL DATA
TO-220 R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.47 62.5 TO-220F P 3.5 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I CEO V CEO(sus) V EBO V CE(sat )∗ Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Collector-Emitter Sustaining Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Test Cond ition s V CE = 700 V V CE = 700 V V EC = 400 V I C = 100 mA I E = 10 mA IC IC IC IC IC = = = = = 2 3 4 5 8 A A A A A IB IB IB IB IB = = = = = 0.4 A 0.6 A 0.8 A 1A 2A L = 25 mH 400 9 0.65 0.75 1.2 2 2 1.2 1.6 15 6 8 1.8 60 2.6 110 1 54 1.5 90 1.6 100 40 Tj = 125 C
o
Min.
Typ .
Max. 100 500 250
Un it µA µA µA V V V V V V V V V
V BE(s at)∗ h F E∗
Base-Emitt er Saturation Voltage DC Current Gain
IC = 2 A IC = 5 A IC = 2 A IC = 4 A I C = 10 mA IC = 3 A I B1 = 0.6 A L = 200 µ H IC = 3 A I B1 = 0.6 A L = 200 µ H
IB = 0.4 A IB = 1 A VCE = 5 V VCE = 5 V VCE = 5 V V CL = 250 V I B2 = -1.2 A V CL = 250 V I B2 = -1.2 A o Tj = 125 C IB1 = 0.6 A R BB = 0 Ω L = 200 µ H IB1 = 0.6 A R BB = 0 Ω L = 200 µ H IC = 2 A IB2 = -0.4 A
ts tf ts tf ts tf ts tf
INDUCTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time RESISTIVE LO AD Storage Time Fall Time
2.6 110
µs ns µs ns µs ns µs ns
IC = 3 A V BE(of f) = -5 V V CL = 250 V IC = 3 A V BE(of f) = -5V V CL = 250 V o T j = 125 C V CC = 300 V I B1 = 0.4 A Tp = 30 µ s
ts tf
3
4.2 350
ms ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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BUL57 / BUL57FP
Safe Operating Areas Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
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BUL57 / BUL57FP
Inductive Fall Time Inductive Storage Time
Resistive Fall Time
Resistive Load Storage Time
Reverse Biased SOA
RBSOA and Inductive Load Switching Test Circuit
1) Fast electronic switc h 2) Non-inductive Resistor 3) Fast recovery Rect ifier
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BUL57 / BUL57FP
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
P011C
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BUL57 / BUL57FP
TO-220FP MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
A
B
L3 L6 L7 F1 ¯ F
D
G1
E
H
F2
123 L2 L4
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BUL57 / BUL57FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com .
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