BUL67

BUL67 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s SGS-THOMSON PREFERRED SALESTYPE HIGH RUGGEDNESS NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC 3 1 2 APPLICATIONS ELECTRONICS TRANFORMER FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES s TO-220 DESCRIPTION The BUL67 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and in low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 700 400 9 10 18 3.5 7 100 -65 to 150 150 Uni t V V V A A A A W o o C C September 1997 1/6 BUL67 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.25 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO V CEO(sus) V EBO V CE(sat )∗ Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Collector-Emitter Sustaining Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain INDUCTIVE LOAD Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime Test Cond ition s V CE = 700 V V CE = 700 V V CE = 400 V I C = 100 mA I E = 10 mA IC = 3 A IC = 4 A IC = 6 A IC = 3 A IC = 4 A IC = 6 A IB = 0.6 A IB = 0.8 A IB = 1.5 A IB = 0.6 A IB = 0.8 A IB = 1.5 A 15 10 2.1 100 3 180 L = 25 mH 400 9 0.8 1 1.5 1.2 1.3 1.5 50 Tj = 125 oC Min. Typ . Max. 100 500 250 Un it µA µA µA V V V V V V V V V BE(s at)∗ h FE∗ I C = 1.5 A VCE = 3 V I C = 10 mA V CE = 5 V I C = 3 A VCL = 250 V I B1 = 0.6 A IB2 = -1.2 A L = 200 µ H I C = 3 A VCL = 250 V I B1 = 0.6 A IB2 = -1.2 A L = 200 µ H T j = 125 oC ts tf ts tf 3.2 180 µs ns µs ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Areas Derating Curve 2/6 BUL67 DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6 BUL67 Inductive Fall Time Inductive Storage Time Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuits ( 1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6 BUL67 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 5/6 BUL67 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 6/6