BUL741

BUL741 High voltage fast-switching NPN power transistor General features ■ ■ ■ ■ High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. 1 2 TO-220 Figure 1. Internal schematic diagram Applications ■ ■ Electronic ballast for fluorescent lighting Switch mode power supplies. Table 1. Device summary Marking BUL741 Package TO-220 Packaging Tube Order code BUL741 July 2007 Rev 2 1/10 www.st.com 10 Electrical ratings BUL741 1 Electrical ratings Table 2. Absolute maximum rating Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Parameter Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, IB = 2A, tP < 10ms) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at T c = 25°C Storage temperature Max. operating junction temperature Value 1050 400 V(BR)EBO 2.5 5 1.5 3 60 -65 to 150 150 Unit V V V A A A A W °C °C Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case __max Value 2.08 Unit °C/W 2/10 BUL741 Electrical characteristics 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Symbol ICES ICEO V(BR)EBO Electrical characteristics Parameter Collector cut-off current (VBE =0V) Collector cut-off current (IB =0) Emitter-base breakdown voltage (IC = 0) Test conditions VCE =1050V VCE =400V IE =1mA IC =10mA 400 IC =0.7A IC =2A IC =2A IC =0.1A IC =0.45A VCC =125V VBE(off) =-5V L =2mH VBE(off) =-5V C =1.8nF 5 IB =0.14A IB =0.6A IB =0.6A VCE =5V VCE =3V IC =1A 2.5 350 3.5 500 µs ns mJ 48 25 450 0.15 0.5 1.1 70 35 0.5 1.5 1.5 100 50 V V V V 15 Min. Typ. 0.2 10 19 Max. 10 250 24 Unit µA µA V Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VCE(sat) (1) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Resistive load Storage time Fall time Repetitive avalanche energy VBE(sat) (1) hFE ts tf Ear IB1 = -IB2 =0.2A tp = 300µs Note (1) Pulsed duration = 300µs, duty cycle ≤1.5% 3/10 Electrical characteristics BUL741 2.1 Typical characteristic Figure 2. Safe operating area Figure 3. Derating curve Figure 4. Output characteristics Figure 5. Reverse biased safe operating area Figure 6. DC current gain Figure 7. DC current gain 4/10 BUL741 Figure 8. Base-emitter saturation voltage Figure 9. Electrical characteristics Collector-emitter saturation voltage Figure 10. Resistive load switching on times Figure 11. Resistive load switching on times Figure 12. Resistive load switching off times Figure 13. Resistive load switching off times 5/10 Electrical characteristics BUL741 2.2 Test circuits Figure 14. Resistive load switching test circuitit 1) Fast electronic switch 2) Non-inductive resistor Figure 15. Energy rating test circuit 6/10 BUL741 Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 Package mechanical data BUL741 TO-220 Mechanical data DIM. A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 øP Q 3.75 2.65 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.85 2.95 mm. MIN. 4.40 0.61 1.14 0.49 15.25 1.27 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 TYP MAX. 4.60 0.88 1.70 0.70 15.75 8/10 BUL741 Revision history 4 Table 5. Date Revision history Revision history Revision 1 2 Initial release. Figure 12 and 13 have been updated. Changes 11-Apr-2007 10-Jul-2007 9/10 BUL741 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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