BUL742A
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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■
■
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HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS
FOUR LAMP ELECTRONIC BALLAST FOR:
120 V MAINS IN PUSH-PULL
CONFIGURATION;
277 V MAINS IN HALF BRIDGE CURRENT
FEED CONFIGURATION.
■ SWITCH MODE POWER SUPPLIES
■
DESCRIPTION
The BUL742A is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V CES
Collector-Emitter Voltage (V BE = 0)
V CEO
Collector-Emitter Voltage (I B = 0)
V EBO
Emitter-Base Voltage
(I C = 0, I B ≤ 2 A, t p < 10µs, T j < 150 o C)
IC
I CM
IB
Value
Unit
950
V
400
V
V (BR)EBO
V
Collector Current
4
A
Collector Peak Current (t p
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