BUL810

BUL810 High voltage fast-switching NPN power transistor Features ■ ■ ■ ■ ■ High voltage capability Low spread of dynamic parameters Low base-drive requirements Very high switching speed Fully characterized at 125 °C 3 2 1 Applications ■ ■ ■ Electronic transformer for halogen lamps Electronic ballast for fluorescent lighting Switch mode power supplies. Figure 1. TO-247 Description The BUL810 is manufactured using high voltage multiepitaxial mesa technology for cost-effective high performance. It uses a hollow emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. Internal schematic diagram Table 1. Device summary Marking BUL810 Package TO-247 Packaging Tube Order code BUL810 March 2008 Rev 4 1/10 www.st.com 10 Electrical ratings BUL810 1 Electrical ratings Table 2. Absolute maximum ratings Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Parameter Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value 1000 450 9 15 22 5 10 125 -65 to 150 150 Unit V V V A A A A W °C °C Table 3. Symbol Rthj-case Rthj-amb Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-ambient __max __max Value 1 30 Unit °C/W °C/W 2/10 BUL810 Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Symbol ICES Electrical characteristics Parameter Collector cut-off current (VBE = 0) Collector cut-off current (IB = 0) Test conditions VCE = 1000 V VCE = 1000 V TC = 125 °C VCE = 450 V Min. Typ. Max. 100 500 250 Unit µA µA µA ICEO Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VEBO Emitter-base voltage (IC = 0) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Inductive load Storage time Fall time Inductive load Storage time Fall time IC = 100 mA 450 V IE = 10 mA IC = 5 A IC = 8 A IC = 12 A IB = 1 A IB = 1.6 A IB = 2.4 A IB = 1 A IB = 1.6 A VCE = 5 V V CE = 5 V IB1 = 1.6 A L = 200 µH RBB = 0.4 Ω IB1 = 1.6 A L = 200 µH RBB = 0.4 Ω 9 1 1.5 5 1.3 1.6 10 10 40 V V V V V V VCE(sat) (1) VBE(sat) (1) hFE (1) IC = 5 A IC = 8 A IC = 10 mA IC = 5 A IC = 8 A VCL = 350 V VBE(off) = -5 V IC = 8 A VCL = 350 V VBE(off) = -5 V Tc = 100 °C ts tf 1.5 55 2.3 110 µs ns ts tf 1.9 80 µs ns 1. Pulse duration = 300 µs, duty cycle ≤1.5% 3/10 Electrical characteristics BUL810 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve Figure 4. DC current gain Figure 5. DC current gain Figure 6. Collector-emitter saturation voltage Figure 7. Base-emitter saturation voltage 4/10 BUL810 Figure 8. Inductive load fall time Figure 9. Electrical characteristics Inductive storage fall time Figure 10. Reverse biased safe operating area 5/10 Electrical characteristics BUL810 2.2 Test circuit Figure 11. Inductive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier 6/10 BUL810 Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 Package mechanical data BUL810 TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S 8/10 BUL810 Revision history 4 Revision history Table 5. Date 01-Feb-2003 12-Feb-2008 Document revision history Revision 3 4 Package change from TO-218 to TO-247. Changes 9/10 BUL810 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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