BUL85D

® BUL85D MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS 3 1 2 APPLICATIONS 110V AC ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS UP TO 100 W s SWITCH MODE POWER SUPPLIES s TO-220 DESCRIPTION The BUL85D is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. The BUL85D is designed for use in 110V AC electronic transformers for halogen lamps. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO VEBO IC ICM IB IBM P tot Tstg Tj Parameter Collector-Emitter Voltage (V BE = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 , IB < 2 .5 A, t p < 1 0 µ s, T J < 1 50 o C) Collector Current Collector Peak Current (t p < 5 m s) Base Current Base Peak Current (t p < 5 m s) Total Dissipation at Tc = 25 o C Storage Temperature Max. Operating Junction Temperature Value 500 250 V (BR)EBO 8 15 4 8 80 -65 to 150 150 Unit V V V A A A A W o o C C January 2002 1/7 BUL85D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.56 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES IEBO V(BR)EBO Parameter Collector Cut-off Current (V BE = 0 ) Emitter Cut-off Current (I C = 0 ) Emitter-Base Breakdown Voltage (I C = 0 ) Test Conditions V CE = 5 00 V V CE = 5 00 V V EB = 9 V I E = 1 0mA 10 T j = 1 25 o C Min. Typ. Max. 100 500 100 18 Unit µA µA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) VCE(sat) ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = 1 0 mA L = 25 mH 250 V IC = 2 A IC = 4 A IC = 8 A IC = 2 A IC = 8 A I C = 1 0 mA I C = 0 .5 A IC = 14 A I B = 0 .4 A I B = 0 .8 A I B = 1 .6 A I B = 0 .4 A I B = 1 .6 A V CE = 5 V V CE = 5 V V CE = 1 0 V 10 4 1.2 0.1 0.3 0.6 1.2 1.1 1.5 60 10 V V V V V V BE(sat) ∗ h FE ∗ ts tf ts tf Vf RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time IC = 4 A V CC = 1 50 V I B(on) = - I B(off) = 0 .8 A (see figure 2) tp ≥ 30 µs IC = 4 A I B = 0 .8 A R BB = 0 Ω (see figure 1) V CL = 2 00 V V BE(off) = - 3 V tp ≥ 30µs 1.8 2.4 250 µs ns µs ns 0.7 50 1 .5 Diode Forward Voltage I C = 5 A V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 BUL85D Safe Operating Area Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BUL85D Switching Time Resistive Load Switching Time Inductive Load Diode Forward Voltage Reverse Biased SOA 4/7 BUL85D Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BUL85D TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 P011CI 6/7 BUL85D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7