BUL89

® BUL89 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC APPLICATIONS s ELECTRONIC TRANSFORMER FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL89 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitt er-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction T emperature Value 850 400 9 12 25 6 12 110 -65 to 150 150 Uni t V V V A A A A W o o C C January 2000 1/6 BUL89 THERMAL DATA R t hj-ca se Thermal Resistance Junction-Case Max 1.14 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Test Cond ition s V CE = 850 V V CE = 850 V V CE = 400 V I C = 10 mA L = 25 mH 400 T j = 125 C o Min. Typ . Max. 100 500 100 Un it µA µA µA V V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat )∗ Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time I E = 10 mA IC = 5 A IC = 8 A I C = 12 A IC = 5 A IC = 8 A IC = 5 A I C = 10 mA IC = 8 A V BE(of f) = -5 V V CL = 350 V IC = 8 A V BE(of f) = -5 V V CL = 350 V o T j = 100 C IB = 1 A IB = 1.6 A I B = 2.4 A IB = 1 A IB = 1.6 A VCE = 5 V V CE = 5 V IB1 = 1.6 A R BB = 0 Ω L = 200 µ H IB1 = 1.6 A R BB = 0 Ω L = 200 µ H 9 1 1.5 5 1.3 1.6 10 10 1.5 55 1.9 80 40 V V V V V V V BE(s at)∗ h FE∗ ts tf ts tf 2.3 110 µs ns µs ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Derating Curve 2/6 BUL89 DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6 BUL89 Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6 BUL89 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 5/6 BUL89 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6