0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BUL89_01

BUL89_01

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    BUL89_01 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR - STMicroelectronics

  • 数据手册
  • 价格&库存
BUL89_01 数据手册
® BUL89 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC APPLICATIONS s ELECTRONIC TRANSFORMER FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL89 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p < 5 m s) Base Current Base Peak Current (t p < 5 m s) Total Dissipation at T c = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 850 400 9 12 25 6 12 110 -65 to 150 150 Unit V V V A A A A W o o C C September 2001 1/6 BUL89 THERMAL DATA R thj-case Thermal Resistance Junction-Case Max 1.14 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0 ) Collector Cut-off Current (I B = 0 ) Test Conditions V CE = 8 50 V V CE = 8 50 V V CE = 4 00 V I C = 1 0 mA L = 25 mH 400 T j = 1 25 o C Min. Typ. Max. 100 500 100 Unit µA µA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V EBO V CE(sat) ∗ Emitter-Base Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time I E = 1 0 mA IC = 5 A IC = 8 A IC = 12 A IC = 5 A IC = 8 A IC = 5 A I C = 1 0 mA IC = 8 A V BE(off) = -5 V V CL = 3 50 V (see figure 1) IC = 8 A V BE(off) = -5 V V CL = 3 50 V T j = 1 00 o C IB = 1 A I B = 1 .6 A I B = 2 .4 A IB = 1 A I B = 1 .6 A V CE = 5 V V CE = 5 V I B1 = 1 .6 A R BB = 0 Ω L = 200 µ H I B1 = 1 .6 A R BB = 0 Ω L = 200 µ H (see figure 1) 9 1 1.5 5 1.3 1.6 10 10 1.5 55 40 V V V V V V V BE(sat) ∗ h FE ∗ ts tf 2.3 110 µs ns ts tf 1.9 80 µs ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Derating Curve 2/6 BUL89 DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Load Fall Time Inductive Load Storage Time 3/6 BUL89 Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier 4/6 BUL89 TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 P011CI 5/6 BUL89 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6
BUL89_01 价格&库存

很抱歉,暂时无法提供与“BUL89_01”相匹配的价格&库存,您可以联系我们找货

免费人工找货