BUL903

® BUL903ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED ARCING TEST SELF PROTECTED TO-220 1 2 3 APPLICATIONS s LAMP ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING USING 277V HALF BRIDGE CURRENT-FED CONFIGURATION DESCRIPTION The BUL903ED is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The device has been designed in order to operate without baker clamp and transil protection. This enables saving from 2 up to 10 components in the application. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp