BUL903EDFP

® BUL903EDFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s s INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED ARCING TEST SELF PROTECTED FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING 3 1 2 TO-220FP s APPLICATIONS FOUR LAMP ELECTRONIC BALLAST FOR 120 V MAINS IN PUSH-PULL CONFIGURATION DESCRIPTION The BUL903EDFP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The device has been designed to operate without baker clamp and transil protection. This enables saving from 2 up to 10 components in the application. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot Visol T stg Tj Parameter Collector-Emitter Voltage (V BE = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at Tc = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature Value 900 400 7 5 8 2 4 35 1500 -65 to 150 150 Unit V V V A A A A W V o o C C September 2003 1/7 BUL903EDFP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 3.57 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO V (BR)CES Parameter Collector Cut-off Current (V BE = 0 ) Emitter Cut-off Current (I C = 0 ) Collector-Emitter Breakdown Voltage (V BE = 0 ) Test Conditions V CE = 9 00 V V EB = 7 V I C = 1 00 µ A 900 Min. Typ. Max. 100 100 Unit µA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V CE(sat) ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = 1 0 mA L = 25 mH 400 V I C = 0 .5 A IC = 1 A IC = 2 A I C = 0 .5 A IC = 1 A IC = 2 A IC IC IC IC = = = = 1 0 mA 0 .25 A 0 .5 A 2 .5 A I B = 5 0 mA I B = 0 .15 A I B = 0 .4 A I B = 5 0 mA I B = 0 .15 A I B = 0 .4 A V CE = V CE = V CE = V CE = 5 5 5 5 V V V V 20 40 28 8 0.5 1 1.5 1 1.1 1.2 70 60 16 0.2 1 0.8 0.25 6 V V V V V V V BE(sat) ∗ h FE ∗ td tr ts tf E ar RESISTIVE LOAD Delay Time Rise Time Storage Time Fall Time Repetitive Avalanche Energy V CC = 1 25 V I B1 = 5 0 mA t p = 3 00 µ s (see figure 1) V CC = 5 0V V BE = -5 V (see figure 2) I C = 0 .7 A I B2 = 0 .4 A µs µs µs µs mJ C = 1.8 nF L = 2 mH VF Parallel Diode Forward I F = 2 A Voltage 1.2 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 BUL903EDFP Safe Operating Area Derating Curve Output Characteristics DC Current Gain DC Current Gain Collector Emitter Saturation Voltage 3/7 BUL903EDFP Base Emitter Saturation Voltage Switching Times Resistive Load Switching Times Inductive Load Reverse Biased SOA 4/7 BUL903EDFP Figure 1: Resistive Load Switching Test Circuit Figure 2 : Energy Rating Test Circuit Figure 3: Inductive Load Switching Test Circuit 5/7 BUL903EDFP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 D ¯ H F G1 E F2 123 L2 L4 6/7 G BUL903EDFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7