BULB49D

BULB49D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BULB49DT4 Marking BULB49D Package / Shipment D2PAK / Tape & Reel s s s s s s HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS SURFACE MOUNTING TO-263 (D 2PAK) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS 3 1 TO-263 D2PAK (Suffix ”T4”) APPLICATIONS: s s INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BULB49D is designed for use in electronic transformers for halogen lamps. ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0, IB < 2 A, tp < 10 ms) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 °C Storage Temperature Max. Operating Junction Temperature Value 850 450 V(BR)EBO 5 10 2 4 80 –65 to 150 150 Unit V V V A A A A W °C °C September 2003 1/7 BULB49D THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.56 62.5 °C/W °C/W ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified) Symbol ICES IEBO V(BR)EBO Parameter Collector Cut-off Current (VBE = 0) Emitter Cut-off Current (IC = 0) Emitter-Base Breakdown Voltage (IC = 0) Collector-Emitter Sustaining Voltage (IB = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain VCE = 850 V VCE = 850 V VEB = 9 V IE = 10 mA 10 Test Conditions Tj = 125 °C Min. Typ. Max. 100 500 100 18 Unit µA µA µA V VCEO(sus)* IC = 10 mA 450 V VCE(sat)* IC = 1 A IC = 2 A IC = 4 A IC = 1 A IC = 4 A IC = 10 mA IC = 500 mA IC = 7 A IC = 8 A L = 50 µH tp = 10 µs IC = 2 A IB1 = -IB2 = 400 mA (See Figure 1) IC = 4 A IB(on) = 800 mA VBE(off) = -5 V (See Figure 2) IC = 3 A IB = 0.2 A IB = 0.4 A IB = 0.8 A IB = 0.2 A IB = 0.8 A VCE = 5 V VCE = 5 V VCE = 10 V VBB = -2.5 V RBB = 0 VCC = 250 V 2 VCL = 300 V RBB(off) = 0 L = 1 mH 10 4 450 0.1 0.3 0.6 1.2 1 1.3 60 10 V V V V V VBE(sat)* hFE* VCEW* Maximum CollectorEmitter Voltage Whithout Snubber RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time Diode Forward Voltage V ts tf ts tf Vf 3 0.8 0.6 50 1.3 100 1.5 µs ns µs ns V * Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %. 2/7 BULB49D Safe Operating Area Derating Curve Output Characteristics Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain 3/7 BULB49D DC Current Gain Inductive Load Storage Time Inductive Load Fall Time Reverse Biased Safe Operating Area 4/7 BULB49D Figure 1: Resistive Load Switching Test Circuit 1) Fast Electronic Switch 2) Non-Inductive Resistor Figure 2: Inductive Load Switching Test Circuit 1) Fast Electronic Switch 2) Non-Inductive Resistor 3) Fast Recovery Rectifier 5/7 BULB49D TO-263 (D2PAK) MECHANICAL DATA DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0o 4.88 15.00 1.27 1.40 2.40 0.40 8o 0o 10.00 8.50 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.016 8o 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 8.00 10.40 0.393 0.334 0.208 0.624 0.055 0.068 0.126 mm TYP. MAX. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 0.409 inch TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 - Weight : 1.38 g (typ.) - The planaty of the slug must be within 30 µm P011P6/G 6/7 BULB49D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 7/7