BULD1101ET4

BULD1101E High voltage fast-switching NPN Power Transistor General features ■ ■ ■ ■ ■ High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European Directive 3 1 DPAK TO-252 IPAK TO-251 1 2 3 Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. Internal schematic diagram Applications ■ Electronic ballast for fluorescent lighting Order codes Part number BULD1101ET4 BULD1101E-1 Marking BULD1101E BULD1101E Package DPAK IPAK Packaging Tape & reel Tube May 2007 Rev 2 1/11 www.st.com 11 Electrical ratings BULD1101E 1 Electrical ratings Table 1. Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at T c = 25°C Storage temperature Max. operating junction temperature Value 1100 450 12 3 6 1.5 3 35 -65 to 150 150 Unit V V V A A A A W °C °C Table 2. Symbol Rthj-case Rthj-amb Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-amb __max __max Value 3.57 100 Unit °C/W °C/W 2/11 BULD1101E Electrical characteristics 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Symbol ICES Electrical characteristics Parameter Test conditions Min. Typ. Max. 100 Unit µA Collector cut-off current VCE =1100V (VBE =0V) Emitter-base breakdown voltage (IC = IE =1mA 0) IC =100mA 450 IC =1A IC =1A IC =1A IB =0.2A IB =0.2A IB =0.2A 20 23 6 4 38 44 10 7 TJ=125°C 0.25 0.6 12 V(BR)EBO 24 V Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VCE(sat) (1) Collector-emitter saturation voltage Base-emitter saturation voltage V 1 1.5 1.5 80 85 18 16 V V V VBE(sat) (1) hFE DC current gain IC =0.25A VCE =5V IC =0.25A VCE =5V T J=125°C VCE =5V IC =2A IC =2A VCE =5V T J=125°C IC =2.5A VCC =125V VBE(off) =-5V L =2mH IBR ≤2.5A ts tf Ear Resistive load Storage time Fall time Repetitive avalanche energy IB1 = -IB2 =0.5A tp = 300µs (see fig.10) C =1.8nF (see fig.11) 6 400 2 700 µs ns mJ Note (1) Pulsed duration = 300µs, duty cycle ≤1.5% 3/11 Electrical characteristics BULD1101E 2.1 Typical characteristic Figure 1. Safe operating area Figure 2. Derating curve Figure 3. Output characteristics Figure 4. Collector-emitter saturation voltage Figure 5. Base-emitter saturation voltage Figure 6. DC current gain 4/11 BULD1101E Figure 7. DC current gain Figure 8. Electrical characteristics Resistive load switching times Figure 9. Reverse biased safe operating area 5/11 Electrical characteristics BULD1101E 2.2 Test circuit Figure 10. Resistive load switching test circuit Figure 11. Energy rating test circuit 6/11 BULD1101E Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/11 Package mechanical data BULD1101E TO-252 (DPAK) MECHANICAL DATA DIM. MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o mm TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 P032P_B 8/11 BULD1101E Package mechanical data TO-251 (IPAK) MECHANICAL DATA DIM. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 0.45 0.48 6.00 6.40 4.40 15.90 9.00 0.80 0.80 10o 0.30 0.95 0.60 0.60 6.20 6.60 4.60 16.30 9.40 1.20 1.00 0.018 0.019 0.237 0.252 0.173 0.626 0.354 0.031 0.031 10o mm MIN. 2.20 0.90 0.70 0.64 5.20 TYP. MAX. 2.40 1.10 1.30 0.90 5.40 0.85 0.012 0.037 0.024 0.024 0.244 0.260 0.181 0.642 0.370 0.047 0.039 MIN. 0.087 0.035 0.028 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.035 0.213 0.033 P032N_E 9/11 Revision history BULD1101E 4 Revision history Table 4. Date 20-Apr-2003 07-May-2007 Revision history Revision 1 2 Initial release. The document has been reformatted. Changes 10/11 BULD1101E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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