BULK128

® BULK128 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 1 2 3 APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. SOT-82 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage o (I C = 0 , I B = 2 A , t p < 1 0 µ s, T j < 1 50 C) Collector Current Collector Peak Current (t p < 5 m s) Base Current Base Peak Current (t p < 5 m s) Total Dissipation at T c = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 V (BR)EBO 4 8 2 4 55 -65 to 150 150 Unit V V V A A A A W o C o C November 2001 1/7 BULK128 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.27 80 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES V (BR)EBO Parameter Collector Cut-off Current (V BE = - 1.5 V) Emitter-Base Breakdown Voltage (I C = 0 ) Test Conditions V CE = 7 00 V V CE = 7 00 V I E = 1 0 mA T C = 1 25 o C 9 Min. Typ. Max. 50 500 18 Unit µA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) I CEO V CE(sat) ∗ Collector Cut-Off Current (I B = 0 ) Collector-Emitter Saturation Voltage I C = 1 00 mA L = 25 mH 400 V V CE = 4 00 V IC IC IC IC = = = = 0 .5 A 1A 2 .5 A 4A IB IB IB IB = = = = 0 .1 A 0 .2 A 0 .5 A 1A 250 0.7 1 1.5 0.5 1.1 1.2 1.3 10 14 1.5 0.2 0.6 0.1 28 3 0.4 1 0.2 µA V V V V V V V V BE(sat) ∗ Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time I C = 0 .5 A IC = 1 A I C = 2 .5 A I C = 1 0 mA IC = 2 A V CC = 1 25 V I B1 = 0 .4 A Tp = 30 µs IC = 2 A V BE(off) = -5 V V clamp = 2 00 V I B = 0 .1 A I B = 0 .2 A I B = 0 .5 A V CE = 5 V V CE = 5 V IC = 2 A I B2 = - 0.4 A (see fig.2) I B1 = 0 .4 A R BB = 0 Ω (see fig.1) h FE ∗ ts tf ts tf µs µs µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2/7 BULK128 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BULK128 Inductive Load Fall Time Inductive Load Storage Time Resistive Load Fall Time Resistive Load Storage Time Reverse Biased SOA 4/7 BULK128 Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BULK128 SOT-82 MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F H H2 2.15 4.15 3.8 2.54 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.100 0.084 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16 MIN. 0.291 0.413 0.028 0.019 0.04 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.444 0.035 0.030 0.106 0.05 0.629 DIM. C A F H H2 c1 b b1 e e3 D P032A 6/7 B BULK128 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7