BULT106D
High voltage fast-switching NPN power transistor
Features
■
NPN transistor
■
Low spread of dynamic parameters
■
Minimum lot-to-lot spread for reliable operation
■
Very high switching speed
Applications
■
Compact fluorescent lamps at 110V A.C. mains
■
Flyback and forward single transistor low power
converters at 110V A.C. mains
3
The device is manufactured using multi-epitaxial
Planar technology for high switching speeds and
medium voltage capability. It uses a Cellular
Emitter structure with planar edge termination to
enhance switching speeds while maintaining the
wide RBSOA. The device is designed for use in
lighting applications and low cost switch-mode
power supplies.
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Figure 1.
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SOT-32
Description
2
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Internal schematic diagram
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Table 1.
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Device summary
Order code
Marking
Package
Packaging
BULT106D
BULT106D
SOT-32
Tube
February 2008
Rev 1
1/8
www.st.com
8
BULT106D
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
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BULT106D
Electrical ratings
Electrical ratings
1
Table 2.
Absolute maximum rating
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (V BE = 0)
400
V
VCEO
Collector-emitter voltage (IB = 0)
230
V
VEBO
Emitter-base voltage (IC = 0)
9
V
Collector current
2
A
Collector peak current (tP < 5ms)
4
A
Base current
0.4
A
IBM
Base peak current (tP < 5ms)
0.8
A
Ptot
Total dissipation at Tc = 25 °C
32
Tstg
Storage temperature
IC
ICM
IB
TJ
Table 3.
Rthj-case
Parameter
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Thermal resistance junction-case
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150
Thermal data
Symbol
W
-65 to 150
Max. operating junction temperature
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__max
°C
°C
Value
Unit
3.9
°C/W
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Electrical characteristics
2
BULT106D
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Unit
VCE = 400 V
100
µA
ICEO
Collector cut-off current
(IB = 0)
VCE = 230 V
250
µA
VEBO
Emitter-Base Voltage
(IC = 0)
IE = 10 mA
9
IC = 10 mA
230
VBE(sat) (1)
hFE
VF
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Diode forward voltage
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IC = 0.5 A
_
IC = 2 A
_ _ IB = 0.4 A
IC = 2 A
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let
IB = 0.4 A
IC = 10 mA
VCE = 5 V
10
V CE = 5 V
10
IC = 3 A
V CE = 10 V
4
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IB = 0.2 A
IC = 1 A
IC = 2 A
V
_ IB = 0.1 A
IC = 1 A
1. Pulsed duration = 300 µs, duty cycle ≥ 1.5%.
4/8
Max.
Collector cut-off current
(VBE = 0)
VCE(sat) (1)
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Typ.
ICES
Collector-emitter
VCEO(sus) (1) sustaining voltage
(IB = 0)
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Min.
20
0.4
0.8
1.2
V
V
V
1.5
V
30
2
V
BULT106D
3
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Package mechanical data
BULT106D
SOT-32 (TO-126) mechanical data
mm.
DIM.
MIN.
TYP
MAX.
A
2.4
2.9
B
0.64
0.88
B1
0.39
0.63
D
10.5
11.05
E
7.4
7.8
e
2.04
2.29
2.54
e1
4.07
4.58
5.08
L
15.3
16
P
2.9
3.2
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3.8
Q1
1
H2
2.15
I
1.27
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0016114E
BULT106D
4
Revision history
Revision history
Table 5.
Document revision history
Date
Revision
27-Feb-2008
1
Changes
Initial release.
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BULT106D
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