BULT106D

BULT106D High voltage fast-switching NPN power transistor Features ■ NPN transistor ■ Low spread of dynamic parameters ) s ( t c Applications u d o ) r s ( P t c e t u e d l Description o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Compact fluorescent lamps at 110V A.C. mains ■ Flyback and forward single transistor low power converters at 110V A.C. mains The device is manufactured using multi-epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1. 3 2 1 SOT-32 Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging BULT106D BULT106D SOT-32 Tube February 2008 Rev 1 1/8 www.st.com 8 BULT106D Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 2/8 BULT106D 1 Electrical ratings Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCES Collector-emitter voltage (V BE = 0) 400 V VCEO Collector-emitter voltage (IB = 0) 230 V VEBO Emitter-base voltage (IC = 0) 9 V Collector current 2 A Collector peak current (tP < 5ms) 4 A Base current 0.4 A IBM Base peak current (tP < 5ms) 0.8 A Ptot Total dissipation at Tc = 25 °C 32 W Tstg Storage temperature -65 to 150 °C 150 °C IC ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O ICM IB TJ Table 3. Symbol Rthj-case Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case __max Value Unit 3.9 °C/W 3/8 Electrical characteristics 2 BULT106D Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE = 400 V 100 µA ICEO Collector cut-off current (IB = 0) VCE = 230 V 250 µA VEBO Emitter-Base Voltage (IC = 0) IE = 10 mA 9 V IC = 10 mA 230 V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VCE(sat) (1) VBE(sat) (1) hFE VF Collector-emitter saturation voltage IC = 0.5 A _ _ IB = 0.4 A 0.4 0.8 1.2 V V V _ 1.5 V _ IC = 2 A Base-emitter saturation voltage IC = 2 A IC = 10 mA VCE = 5 V 10 DC current gain IC = 1 A V CE = 5 V 10 IC = 3 A V CE = 10 V 4 Diode forward voltage IC = 2 A 1. Pulsed duration = 300 µs, duty cycle ≥ 1.5%. 4/8 _ IB = 0.1 A IC = 1 A IB = 0.2 A IB = 0.4 A 20 30 2 V BULT106D 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 5/8 Package mechanical data BULT106D SOT-32 (TO-126) mechanical data DIM. mm. MIN. TYP MAX. A 2.4 2.9 B 0.64 0.88 B1 0.39 0.63 D 10.5 11.05 E 7.4 7.8 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O e 2.04 2.29 2.54 e1 4.07 4.58 5.08 L 15.3 16 P 2.9 3.2 Q Q1 3.8 1 1.52 H2 2.15 I 1.27 0016114E 6/8 BULT106D 4 Revision history Revision history Table 5. Document revision history Date Revision 27-Feb-2008 1 Changes Initial release. ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 7/8 BULT106D ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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