BULT116D

® BULT116D MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA s s s s INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: COMPACT FLUORESCENT LAMPS UP TO 23 W AT 110 V A.C. MAINS s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS AT 110 V A.C. MAINS s 3 2 1 SOT-32 DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p < 5 m s) Base Current Base Peak Current (t p < 5 m s) Total Dissipation at T c = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 400 200 9 5 10 2 4 45 -65 to 150 150 Unit V V V A A A A W o o C C February 2003 1/6 BULT116D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.78 80 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES V EBO Parameter Collector Cut-off Current (V BE = 0 ) Emitter-Base Voltage (I C = 0 ) Test Conditions V CE = 4 00 V V CE = 4 00 V I E = 1 0 mA I C = 1 00 mA T c = 125 o C 9 200 Min. Typ. Max. 100 500 Unit µA µA V V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I CEO V CE(sat) ∗ Collector Cut-off Current (I B = 0) Collector-Emitter Saturation Voltage V CE = 2 00 V IC IC IC IC = = = = 0 .5 A 1A 3A 5A IB IB IB IB = = = = 5 0 mA 0 .1 A 0 .6 A 1A 250 0.25 0.4 0.7 1.2 1.1 1.5 10 8 0.2 0.2 1.4 0.5 0.1 1 .5 20 µA V V V V V V V BE(sat) ∗ h FE ∗ Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Rise Time Fall Time Storage Time INDUCTIVE LOAD Storage Time Fall Time IC = 1 A IC = 5 A I C = 1 0 mA IC = 5 A V CC = 1 25 V I B1 = 0 .4 A tp = 30 µs IC = 2 A V BE = -5 V V clamp = 180 V I B = 0 .1 A IB = 1 A V CE = 5 V V CE = 5 V IC = 2 A I B2 = - 0.4 A (see figure 2) I B1 = 0 .4 A L = 500 µ H (see figure 1) tr tf ts ts tf VF 0.4 µs µs µs µs µs V Diode Forward Voltage I C = 2 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Derating Curve 2/6 BULT116D DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Switching Time Resistive Load Switching Time Inductive Load 3/6 BULT116D Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 4/6 BULT116D SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 I O V 2.15 1.27 0.3 10 o DIM. 7.4 10.5 0.7 0.40 2.4 1.0 15.4 inch MAX. 7.8 10.8 0.9 0.65 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.015 0.094 0.039 0.606 0.087 0.173 0.150 3.2 2.54 0.084 0.05 0.011 10o 0.118 0.126 0.100 TYP. MAX. 0.307 0.425 0.035 0.025 0.106 0.051 0.630 TYP. 2.2 4.4 3.8 3 1: Base 2: Collector 3: Emitter 0016114/B 5/6 BULT116D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6