BULT118D

BULT118D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s NPN TRANSISTOR INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 2 1 APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 700 400 9 2 4 1 2 45 -65 to 150 150 Uni t V V V A A A A W o o C C June 1997 1/7 BULT118D THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.77 80 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES V EBO V CEO(sus) I CEO V CE(sat )∗ Parameter Collector Cut-off Current (V BE = 0) Emitter-Base Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain Test Cond ition s V CE = 700 V V CE = 700 V I E = 10 mA I C = 100 mA V CE = 400 V I C = 0.5 A IC = 1 A IC = 2 A I C = 0.5 A IC = 1 A IC = 2 A I C = 10 mA I C = 0.5 A IC = 2 A V CC = 125 V I B1 = 0.2 A IC = 1 A V BE = -5 V V c la mp = 300 V IB = 0.1 A IB = 0.2 A IB = 0.4 A IB = 0.1 A IB = 0.2 A IB = 0.4 A V CE = 5 V VCE = 5 V VCE = 5 V IC = 1 A IB2 = -0.2 A IB1 = 0.2 A L = 50 mH 10 10 8 0.4 3.2 0.25 0.8 0.16 L = 25 mH Tj = 125 o C 9 400 250 0.5 1 1.5 1.0 1.2 1.3 50 Min. Typ . Max. 100 500 Un it µA µA V V µA V V V V V V V BE(s at)∗ h FE∗ tr ts tf ts tf RESISTIVE LO AD Rise Time Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime 0.7 4.5 0.4 µs µs µs µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 BULT118D Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BULT118D Inductive Fall Time Inductive Storage Time Resistive Fall Time Resistive Load Storage Time Reverse Biased SOA 4/7 BULT118D Figure 1: Inductive Load Switching Test Circuits. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuits. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BULT118D SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 2.15 3 4.15 3.8 3.2 2.54 0.084 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 0016114 6/7 BULT118D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 7/7