BUR51

BUR51 HIGH CURRENT NPN SILICON TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj June 1997 Parameter Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p = 1 0 ms) Base Current Total Dissipation at T c ≤ 2 5 C Storage Temperature Max. Operating Junction Temperature o Value 300 200 10 60 80 16 350 -65 to 200 200 Unit V V V A A A W o o C C 1/4 BUR51 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEO I EBO Parameter Collector Cut-off Current (I E = 0 ) Collector Cut-off Current (I B = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CB = 3 00 V V CB = 3 00 V V CE = 200 V V EB = 7 V I C = 2 00 mA I E = 1 0 mA IC = 30 A IC = 50 A IC = 30 A IC = 50 A IC = 5 A IC = 50 A V CE = 2 0 V IC = 1 A f = 1 M Hz IC = 50 A V CC = 1 00 V IC = 50 A I B2 = - 5 A V clamp = 200 V IB = 2 A IB = 5 A IB = 2 A IB = 5 A V CE = 4 V V CE = 4 V t=1s V CE = 5 V I B1 = 5 A I B1 = 5 A V CC = 1 00 V L = 500 µ H T case = 1 25 o C Min. Typ. Max. 0.2 2 1 0 .2 Unit mA mA mA µA V V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V EBO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ I s/b fT t on ts tf Emitter-base Voltage (I C = 0 ) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain Second Breakdown Collector Current Transition-Frequency Turn-on Time Storage Time Fall Time Clamped E s/b C ollector Current 200 10 1 1.5 1.8 2 100 0.9 1.55 20 15 17.5 10 16 0.35 0.9 0.24 50 V V V V A MHz 1 2 0.6 µs µs µs A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 BUR51 TO-3 (I) MECHANICAL DATA mm MIN. A B C D E G N P R U V 11 1.45 2.7 8.9 19 10.7 16.5 25 3.88 38.5 30 30.14 10.9 16.9 TYP. 11.7 1.5 MAX. 13.1 1.6 2.92 9.4 20 11.1 17.2 26 4.2 39.3 30.3 MIN. 0.433 0.057 0.106 0.350 0.748 0.421 0.650 0.984 0.153 1.516 1.181 1.187 0.429 0.665 inch TYP. 0.461 0.059 MAX. 0.516 0.063 0.115 0.370 0.787 0.437 0.677 1.024 0.165 1.547 1.193 DIM. P003I 3/4 BUR51 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4