BUT100

BUT100 HIGH POWER NPN SILICON TRANSISTOR s s s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION MOTOR CONTROL s UNINTERRUPTABLE POWER SUPPLY s 1 2 TO-3 (version " S ") DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN Transistor in TO-3 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IE I EM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0 ) Emitter Current Emitter Peak Current Base Current Base Peak Current Total Dissipation at T c < 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 200 125 7 50 150 10 30 300 -65 to 200 200 Unit V V V A A A A W o o C C April 1997 1/4 BUT100 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.58 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = V CEV V CE = V CEV T C = 100 C o Min. Typ. Max. 1 5 1 4 1 Unit mA mA mA mA mA V V V CE = V CEV V BE = - 1.5V V CE = VCEV V BE = -1.5V TC = 100 o C V EB = 5 V I C = 0 .2 A L = 25mH I E = 5 0mA IC IC IC IC IC IC IC IC = = = = = = = = 5 0A 1 00A 5 0A 1 00A 5 0A 1 00A 5 0A 1 00A IB IB IB IB IB IB IB IB = = = = = = = = 2 .5A 1 0A 2 .5A 1 0A 2 .5A 1 0A 2 .5A 1 0A 125 7 V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V EBO V CE(sat) ∗ Emitter-Base Voltage (I C = 0 ) Collector-Emitter Saturation Voltage T j = 1 00 o C T j = 1 00o C 0.9 0.9 1.2 1.5 1.4 2 1.4 2.1 180 V V V V V V V V A/ µ s V BE(sat) ∗ Base-Emitter Saturation Voltage T j = 1 00 o C o T j = 1 00 C I B1 = 5 A T j = 100 o C di c /dt Rate of Rise of on-state Collector Current INDUCTIVE LOAD Storage time Fall Time Crossover Time Maximum Collector Emitter Voltage without Snubber V CC = 1 00V R C = 0 Tp = 3µs V CC = 9 0V I C = 5 0A V BB = - 5 V R B2 = 1 Ω ts tf tc V CEW V clamp = 1 25 V I B1 = 2 .5A LC = 80µH T j = 1 00 o C 125 2 0.2 0.35 µs µs µs V V CC = 9 0V I CWoff = 1 50A I B1 = 1 0A VBB = - 5 V L C = 3 0 µ H R B2 = 1 Ω T j = 1 25 o C ∗ Pulsed: Pulse duration = 3µs, duty cycle = 2 % 2/4 BUT100 TO-3 (version S) MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 1.47 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.60 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.058 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.063 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003O 3/4 E BUT100 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4