BUT100_03

® BUT100 HIGH POWER NPN SILICON TRANSISTOR s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION MOTOR CONTROL s UNINTERRUPTABLE POWER SUPPLY s 1 2 TO-3 (version " S ") DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN Transistor in TO-3 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IE I EM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = - 1.5V) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Emitter Current Emitter Peak Current Base Current Base Peak Current Total Dissipation at T c < 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 200 125 7 50 150 10 30 300 -65 to 200 200 Unit V V V A A A A W o o C C February 2003 1/4 BUT100 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.58 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current (V BE = - 1.5V) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = V CEV V CE = V CEV V CE = V CEV V CE = VCEV V EB = 5 V I C = 0 .2 A L = 25mH 125 T C = 100 o C T C = 1 00 o C Min. Typ. Max. 1 5 1 4 1 Unit mA mA mA mA mA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V EBO V CE(sat) ∗ Emitter-Base Voltage (I C = 0 ) Collector-Emitter Saturation Voltage I E = 5 0mA IC IC IC IC IC IC IC IC = = = = = = = = 5 0A 1 00A 5 0A 1 00A 5 0A 1 00A 5 0A 1 00A IB IB IB IB IB IB IB IB = = = = = = = = 2 .5A 1 0A 2 .5A 1 0A 2 .5A 1 0A 2 .5A 1 0A 7 0.9 0.9 1.2 1.5 1.4 2 1.4 2.1 180 V V V V V V V V V A/ µ s T c = 1 00 o C T c = 1 00 o C V BE(sat) ∗ Base-Emitter Saturation Voltage T c = 1 00 o C T c = 1 00 o C di c /dt Rate of Rise of on-state Collector Current INDUCTIVE LOAD Storage time Fall Time Crossover Time Maximum Collector Emitter Voltage without Snubber V CC = 1 00V R C = 0 I B1 = 5 A T c = 1 00 o C Tp = 3µs V CC = 9 0V I C = 5 0A V BB = - 5 V R B2 = 1 Ω V CC = 9 0V VBB = - 5 V LC = 30µH T c = 1 25 o C V clamp = 1 25 V I B1 = 2 .5A L C = 80µH T c = 1 00 o C I CWoff = 1 50A I B1 = 1 0A R B2 = 1 Ω ts tf tc V CEW 2 0.2 0.35 125 µs µs µs V ∗ Pulsed: Pulse duration = 3µs, duty cycle = 2 % 2/4 BUT100 TO-3 (version S) MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 1.47 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.60 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.058 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.063 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003O 3/4 E BUT100 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4