BUT32V

BUT32V NPN TRANSISTOR POWER MODULE s s s s s s HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: MOTOR CONTROL s SMPS & UPS s DC/DC & DC/AC CONVERTERS s Pin 4 not connected ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCEV VEBO IC ICM IB I BM Pt ot T stg Tj VI SO Parameter Collector-Emitter Voltage (VBE = -5 V) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p = 10 ms) Base Current Base Peak Current (t p = 10 ms) Tot al Dissipation at T c = 25 o C Storage Temperature Max. Ope rating Junction Temperature Insulation Withstand Voltage (AC-RMS) Value 400 300 7 80 120 16 24 250 -55 to 150 150 2500 Unit V V V A A A A W o o o VCEO(sus) Collector-Emitter Voltage (IB = 0) C C C 1/7 September 1997 BUT32V THERMAL DATA R thj-ca se R t hc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied o Max Max 0.5 0.05 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol I CER ICEV I EBO Parameter Collecto r Cut-of f Current (RBE = 5 Ω ) Collecto r Cut-of f Current (VBE = -5) Test Conditions VCE = VCEV VCE = VCEV VCE = VCEV VCE = VCEV T j = 100 o C T j = 100 o C Min. Typ. Max. 1 5 1 4 1 300 16 T j = 100 o C T j = 100 o C tp = 3 µ s 120 0.6 1.2 1.12 1.1 180 3 1.8 1.9 0.12 0.35 300 6 3 3 0. 4 0. 7 0. 9 1. 9 1. 3 1. 3 V V V V A/ µ s V V µs µs µs V Unit mA mA mA mA mA V Emitter Cut-off Current VEB = 5 V (I C = 0) I C = 0.2 A L = 25 mH Vc lamp = 300 V I C = 40 A I C = 40 A I C = 40 A I C = 40 A I C = 40 A VCE = 5 V IB = 4 A IB = 4 A IB = 4 A IB = 4 A VCEO(SUS) * Collecto r-Emitter Sustaining Voltage hFE ∗ V CE(sat )∗ VBE( sat) ∗ diC /dt DC Current Gain Collecto r-Emitter Saturation Voltage Base-Emitter Saturation Voltage Rate of Rise of On-state Collector VCC = 300 V RC = 0 I B1 = 6 A T j = 100 oC VCE (3 µ s) Collecto r-Emitter Dynamic Voltage VCE (5 µ s) Collecto r-Emitter Dynamic Voltage ts tf tc VCEW Storage Time Fall Time Cross-over Time Maximum Collector Emitter Voltage With ou t Snubber VCC = 300 V R C = 6.2 Ω I B1 = 6 A T j = 100 o C VCC = 300 V R C = 6.2 Ω I B1 = 6 A T j = 100 o C I C = 40 A VCC = 250 V VBB = -5 V R BB = 0. 6 Ω Vc lamp = 300 V I B1 = 4 A L = 0. 3 mH T j = 100 o C I CW off = 60 A I B1 = 4 A VBB = -5 V VCC = 50 V L = 42 µ H RBB = 0.6 Ω T j = 125 o C ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 BUT32V Safe Operating Areas Thermal Impedance Derating Curve Collector-emitter Voltage Versus base-emitter Resistance Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/7 BUT32V Reverse Biased SOA Foward Biased SOA Reverse Biased AOA Forward Biased AOA Switching Times Inductive Load Switching Times Inductive Load Versus Temperature 4/7 BUT32V Dc Current Gain Turn-on Switching Test Circuit (1) Fast electronics switch (2) Non-inductive load Turn-on Switching Waveforms Turn-off Switching Test Circuit Turn-off Switching Waveforms (1) Fast electronic switch (3) Fast recovery rectifier (2) Non-inductive load 5/7 BUT32V ISOTOP MECHANICAL DATA DIM. MIN. A B C D E F G H J K L M N O 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4.1 14.9 30.1 37.8 4 7.8 8.2 4.3 15.1 30.3 38.2 mm TYP. MAX. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 MIN. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 0.322 0.169 0.594 1.193 1.503 inch TYP. MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 G B A O N D E F J C K L M 6/7 H BUT32V Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A . .. 7/7