BUT70

BUT70 HIGH POWER NPN SILICON TRANSISTOR s s s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN 3 2 1 APPLICATION SWITCHING REGULATORS s MOTOR CONTROL s HIGH FREQUENCY AND EFFICENCY CONVERTERS s TO-218 DESCRIPTION The BUT70 is a Multiepitaxial planar NPN transistor in TO-218 plastic package. It’s intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO I E(RMS) I EM IB I BM P tot T stg Tj Parameter Collector-emitter Voltage (V BE = - 1.5V) Collector-emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Emitter Current Emitter Peak Current Base Current Base Peak Current Total Power Dissipation at T case < 2 5 o C Storage Temperature Max Operating Junction Temperature Value 200 125 7 40 120 8 24 200 -65 to 150 150 Unit V V V A A A A W o o C C July 1997 1/4 BUT70 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.63 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = - 5 V I C = 0 .2A L = 25 mH I E = 5 0 mA IC IC IC IC IC IC IC IC = = = = = = = = 70 70 35 35 70 70 35 35 A A A A A A A A IB IB IB IB IB IB IB IB = = = = = = = = 7A 7A 1 .75 A 1 .75 A 7A 7A 1 .75 A 1 .75 A 125 7 0.9 1.5 0.9 1.2 1.8 1.9 1.4 1.4 140 T c = 1 00 C V BE = - 1.5V o V BE = - 1 .5V T C = 100 C o Min. Typ. Max. 1 5 1 4 1 Unit mA mA mA mA mA V V V V V V V V V V A/ µ s V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V EBO V CE(sat) ∗ Emitter-base Voltage (I C = 0 ) Collector-Emitter Saturation Voltage T j = 100 o C T j = 1 00 o C T j = 100 o C Tj = 100 C I B1 = 3.5 A T j = 1 00 o C o V BE(sat) ∗ Base-Emitter Saturation Voltage dic /dt ∗ Rated of Rise of on-state Collector Current V CC = 1 00 V tp =3 µS RC = 0 ∗ Pulsed: Pulse duration = 300 µs, duty cycle < 2 % INDUCTIVE LOAD Symbol tr ts tf Parameter Rise Time Storage Time Fall Time Test Conditions V CC = 9 0 V V BB = -5 V R B2 = 1 .4 Ω L C = 0.13 mH V CLAMP = 125V IC = 3 5 A I B1 = 1 .75 A T J = 100o C Min. Typ. Max. 1.8 0.2 0.35 Unit µs µs µs 2/4 BUT70 TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R Ø – 4 3.95 31 12.2 4.1 – 0.157 0.5 1.1 10.8 14.7 – 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 – 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H ¯ F R 123 P025A G 3/4 BUT70 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4