BUT70W

® BUT70W HIGH POWER NPN TRANSISTOR s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN 3 2 1 APPLICATION SWITCHING REGULATORS s MOTOR CONTROL s HIGH FREQUENCY AND EFFICENCY CONVERTERS s TO-247 DESCRIPTION The BUT70W is a Multiepitaxial planar NPN transistor in TO-247 plastic package. It’s intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO I E(RMS) I EM IB I BM P tot T stg Tj Parameter Collector-emitter Voltage (V BE = - 1.5V) Collector-emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Emitter Current Emitter Peak Current Base Current Base Peak Current Total Power Dissipation at T case < 2 5 C Storage Temperature o Value 200 125 7 40 120 8 24 200 -65 to 150 150 Unit V V V A A A A W o o C C Max Operating Junction Temperature February 2002 1/4 BUT70W THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.63 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV IEBO Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current (V BE = - 1.5V) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = 2 00 V V CE = 2 00 V V CE = 2 00 V V CE = 2 00 V V EB = 5 V I C = 0 .2 A L = 25 mH 125 T C = 1 00 o C T C = 1 00 o C Min. Typ. Max. 1 5 1 4 1 Unit mA mA mA mA mA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V(BR)EBO Emitter-Base Breakdown Voltage (I C = 0 ) Collector-Emitter Saturation Voltage I E = 5 0 mA 7 V VCE(sat) ∗ IC IC IC IC IC IC IC IC = = = = = = = = 70 70 35 35 70 70 35 35 A A A A A A A A IB IB IB IB IB IB IB IB = = = = = = = = 7A 7A T C = 1 00 o C 1 .75 A 1 .75 A T C = 1 00 o C 7A 7A T C = 1 00 o C 1 .75 A 1 .75 A T C = 1 00 o C I B1 = 3 .5 A T C = 1 00 o C 140 0.9 1.5 0.9 1.2 1.8 1.9 1.4 1.4 V V V V V V V V A/ µ s V BE(sat) ∗ Base-Emitter Saturation Voltage dic /d t ∗ Rated of Rise of on-state Collector Current V CC = 1 00 V tp = 3 µs RC = 0 ∗ Pulsed: Pulse duration = 300 µs, duty cycle < 2 % INDUCTIVE LOAD Symbol ts tf tc Parameter Storage Time Fall Time Cross Over Time Test Conditions IC = 35 A V BB = - 5 V ΙB1 = 1 .75 A V CLAMP = 1 25V V CC = 9 0 V R B2 = 1 .4 Ω L C = 0 .15 mH T C = 1 00 o C Min. Typ. Max. 1.8 0.2 0.35 Unit µs µs µs 2/4 BUT70W TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M 2 15.3 19.7 14.2 34.6 5.5 3 0.079 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 3/4 BUT70W Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4