BUTW92

BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS: MOTOR CONTROL s HIGH FREQUENCY AND EFFICIENCY CONVERTERS s DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency converters and motor controls. TO-247 3 2 1 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IE I EM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Emitter-Current Emitter Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5ms) Total Dissipation at T c ≤ 2 5 C o Value 500 250 7 60 70 15 18 180 -65 to 150 150 Unit V V V A A A A W o o Storage Temperature Max. Operating Junction Temperature C C For PNP type voltage and current values are negative. July 1997 1/4 BUTW92 THERMAL DATA R thj-case Thermal Resistance Junction-case MAX 0.7 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO V CES Parameter Collector Cut-off Current (V BE = - 1.5V) Emitter Cut-off Current (I C = 0 ) Collector-Emitter Breakdown Voltage (V EB = 0) Emitter-Base Breakdown Voltage (I C = 0 ) Test Conditions V CE = 4 50 V VCE = 4 50 V V EB = 5 V IC = 5 mA 500 T C = 1 00 C o Min. Typ. Max. 50 1 50 Unit µA mA µA V V EBO I E = 5 0 mA 7 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B =0) V CE(sat) ∗ V BE(sat) ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = 2 00 mA 250 V IC = 60 A IC = 60 A IC = 60 A IC = 60 A IC = 60 A IC = 60 A IC = 5 A IB = 1 5 A IB = 1 5 A IB = 1 5 A IB = 1 5 A T C = 1 00 o C T C = 1 00 o C 9 6 0.8 1.1 1 1.5 1.9 2 V V V V V CE = 3 V V CE = 3 V T C = 1 00 o C V CE = 3 V V CC = 250 V 65 1.2 250 1.4 300 µs ns ts tf RESISTIVE LOAD Storage Time Fall Time IC = 50 A I B1 = - IB2 = 1 0 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 BUTW92 TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M Dia 2 3.55 15.3 19.7 14.2 34.6 5.5 3 3.65 0.079 0.140 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 3/4 BUTW92 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4