BUV20

® BUV20 HIGH CURRENT NPN SILICON TRANSISTOR s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s SWITCHING REGULATORS s 1 2 TO-3 (version "S") DESCRIPTION The BUV20 is silicon Multiepitaxial Planar NPN transistor mounted in jedec TO-3 metal case. It is intended for use in switching and linear applications in military and industrial equipment. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CER V CEX V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (R BE = 1 00 Ω ) Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Power Dissipation at T case ≤ 25 o C Storage Temperature Junction Temperature Value 160 150 160 125 7 50 60 10 250 -65 to 200 200 Unit V V V V V A A A W o o C C January 2000 1/4 BUV20 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.7 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I CEO I EBO Parameter Collector Cut-off Current (V BE = - 1.5V) Collector Cut-off Current (I B = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = 1 60 V V CE = 1 60 V V CE = 1 00 V V EB = 5 V I C = 2 00 mA L = 25 mH 125 T case = 1 25 o C Min. Typ. Max. 3 12 3 1 Unit mA mA mA mA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V (BR)EB0 ∗ Emitter-base Breakdown Voltage (I C = 0 ) V CE(sat) ∗ V BE(sat) ∗ h FE ∗ fT t on tf ts Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition frequency RESISTIVE LOAD Turn-on Time Fall Time Storage Time I E = 5 0 mA 7 V IC = 25 A IC = 50 A IC = 50 A V CE = 2 V V CE = 4 V V CE = 1 5 V IC = 50 A IB = 2 .5 A IB = 5 A IB = 5 A IC = 25 A IC = 50 A IC = 2 A f = 100 MHz 20 10 8 0.3 0.7 1.4 0.6 1.2 2 60 V V V MHz 1.5 0.3 1.2 µs µs µs IB1 = - I B2 = 5 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %. 2/4 BUV20 TO-3 (version S) MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 1.47 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.60 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.058 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.063 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003O 3/4 E BUV20 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4