BUV26

BUV26 MEDIUM POWER NPN SILICON TRANSISTOR s s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION APPLICATIONS SWITCHING REGULATORS s MOTOR CONTROL s DESCRIPTION The BUV26 is a Multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P tot P tot T stg Tj Parameter Collector-base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0 ) Emitter Current Collector Peak Current (t p < 10ms) Base Current Base Peak Current (t p < 10ms) Total Dissipation at Tc < 25 o C Total Dissipation at T c < 6 0 o C Storage Temperature Max. Operating Junction Temperature Value 180 90 7 14 25 4 6 85 65 -65 to +175 175 Unit V V V A A A A W W o o C C June 1997 1/4 BUV26 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.76 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 5 0Ω ) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1 80V T c = 1 25 C V CE = 1 80V VBE = - 1.5V T c = 1 25 C V EB = 5 V I C = 0 .2 A L = 25mH I E = 5 0mA IC = 6A I C = 1 2A I C = 12A I B = 0 .6A I B = 1.2A I B = 1.2A 90 7 30 0.6 1.5 2 o o Min. Typ. Max. 3 1 1 Unit mA mA mA V V V V V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V EBO V CE(sat) ∗ V BE(sat) ∗ Emitter-Base Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage RESISTIVE LOAD Turn-on Time Storage Time Fall Time INDUCTIVE LOAD Storage time Fall Time Storage Time Fall Time t on ts tf ts tf ts tf V CC = 5 0V V BE = - 6 V R BB = 2 .5Ω V CC = V BE = LB = V CC = V BE = LB = 5 0V - 5V 0 .5 µ H 5 0V - 5V 0 .5 µ H I C = 12A I B1 = 1 .2A 0.4 0.45 0.12 0.5 0.04 0.6 1 0.25 ms µs µs µs µs I C = 1 2A I B1 = 1 .2A IC = 12 A I B1 = 1 .2A T j = 1 25o C 2 0.15 µs µs ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % 2/4 BUV26 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 F1 D G1 E Dia. L5 L7 L6 L4 P011C L9 F2 F G H2 3/4 BUV26 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4