BUV26_03

® BUV26 MEDIUM POWER NPN SILICON TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION APPLICATIONS SWITCHING REGULATORS s MOTOR CONTROL s 3 1 2 DESCRIPTION The BUV26 is a Multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P tot P tot T stg Tj Parameter Collector-base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Emitter Current Collector Peak Current (t p < 10ms) Base Current Base Peak Current (t p < 10ms) Total Dissipation at T c < 2 5 o C Total Dissipation at T c < 6 0 o C Storage Temperature Max. Operating Junction Temperature Value 180 90 7 14 25 4 6 85 65 -65 to +175 175 Unit V V V A A A A W W o o C C February 2003 1/4 BUV26 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.76 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 5 0Ω ) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = 1 80V V CE = 1 80V V EB = 5 V I C = 0 .2 A L = 25mH 90 T c = 1 25 C T c = 1 25 o C o Min. Typ. Max. 3 1 1 Unit mA mA mA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V EBO V CE(sat) ∗ V BE(sat) ∗ Emitter-Base Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage RESISTIVE LOAD Turn-on Time Storage Time Fall Time INDUCTIVE LOAD Storage time Fall Time Storage Time Fall Time I E = 5 0mA IC = 6A I C = 1 2A I C = 12A I B = 0 .6A I B = 1 .2A I B = 1 .2A 7 30 0.6 1.5 2 V V V V t on ts tf ts tf ts tf V CC = 5 0V V BE = - 6 V R BB = 2 .5 Ω V CC = V BE = LB = V CC = V BE = LB = 5 0V - 5V 0 .5 µ H 5 0V - 5V 0 .5 µ H I C = 12A I B1 = 1 .2A 0.4 0.45 0.12 0.5 0.04 0.6 1 0.25 ms µs µs µs µs I C = 1 2A I B1 = 1 .2A IC = 12 A I B1 = 1 .2A o T c = 1 25 C 2 0.15 µs µs ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % 2/4 BUV26 TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 P011CI 3/4 BUV26 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4