BUV298AV_01

厂商：
STMICROELECTRONICS(意法半导体)
封装：
描述：
BUV298AV_01 - NPN TRANSISTOR POWER MODULE - STMicroelectronics

数据手册：

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数据手册
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BUV298AV_01 数据手册

® BUV298AV NPN TRANSISTOR POWER MODULE s s s s s s HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT s Pin 4 not connected ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V EBO IC I CM IB I BM P tot T stg Tj V ISO Parameter Collector-Emitter Voltage (V BE = - 5 V) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p = 1 0 ms) Base Current Base Peak Current (t p = 1 0 ms) Total Dissipation at T C = 2 5 o C Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS) Value 1000 450 7 50 75 10 16 250 -55 to 150 150 2500 Unit V V V A A A A W o o o V CEO(sus) Collector-Emitter Voltage (I B = 0 ) C C C 1/7 October 2001 BUV298AV THERMAL DATA R thj-case R thc-h Thermal Resistance Junction-case Max Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.5 0.05 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current (V BE = - 5V) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0 .2 A L = 25 mH V clamp = 4 50 V IC = 32 A IC = 32 A IC = 32 A IC = 32 A IC = 32 A VCE = 5 V IB = 6 .4 A IB = 6 .4 A IB = 6 .4 A IB = 6 .4 A T j = 1 00 o C T j = 1 00 o C 160 450 12 0.35 0.6 1 0.9 210 4.5 2.5 2.2 0.2 0.45 450 8 4 4.5 0.4 0.7 1.2 2 1.5 1.5 V V V V A/ µ s V V µs µs µs V T j = 1 00 o C T j = 1 00 C o Min. Typ. Max. 0.4 2 0.4 2 2 Unit mA mA mA mA mA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage h FE ∗ V CE(sat) ∗ V BE(sat) ∗ di C /dt DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Rate of Rise of On-state Collector V CC = 3 00 V R C = 0 tp = 3 µ s I B1 = 9 .6 A T j = 1 00 o C V CC = 3 00 V R C = 9 .3 Ω I B1 = 9 .6 A T j = 1 00 o C V CC = 3 00 V R C = 9 .3 Ω I B1 = 9 .6 A T j = 1 00 o C IC = 32 A V BB = -5 V V clamp = 4 50 L = 78 µ H V CC = 5 0 V R BB = 0 .39 Ω V I B1 = 6 .4 A o T j = 1 00 C V CE (3 µ s) Collector-Emitter Dynamic Voltage VCE (5 µ s) Collector-Emitter Dynamic Voltage ts tf tc V CEW Storage Time Fall Time Cross-over Time Maximum Collector Emitter Voltage Without Snubber I CWoff = 4 8 A I B1 = 6 .4 A V BB = -5 V VCC = 5 0 V L = 52 µ H R BB = 0 .39 Ω T j = 1 25 o C ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 BUV298AV Safe Operating Areas Thermal Impedance Derating Curve Collector Emitter Voltage Versus Base Emitter Resistance Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BUV298AV Reverse Biased SOA Forward Biased SOA Reverse Biased AOA Forward Biased AOA Switching Times Inductive Load Switching Times Inductive Load Versus Temperature 4/7 BUV298AV Dc Current Gain Turn-on Switching Test Circuit (1) Fast electronics switch (2) Non-inductive load Turn-on Switching Waveforms Turn-off Switching Test Circuit Turn-off Switching Waveforms (1) Fast electronic switch (3) Fast recovery rectifier (2) Non-inductive load 5/7 BUV298AV ISOTOP MECHANICAL DATA DIM. MIN. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S 14.9 12.6 3.5 4.1 4.6 4 4 30.1 11.8 8.9 7.8 0.75 1.95 37.8 31.5 25.15 23.85 24.8 15.1 12.8 4.3 4.3 5 4.3 4.4 30.3 0.586 0.496 0.137 0.161 0.181 0.157 0.157 1.185 mm TYP. MAX. 12.2 9.1 8.2 0.85 2.05 38.2 31.7 25.5 24.15 MIN. 0.465 0.350 0.307 0.029 0.076 1.488 1.240 0.990 0.938 0.976 0.594 0.503 1.169 0.169 0.196 0.169 0.173 1.193 inch TYP. MAX. 0.480 0.358 0.322 0.033 0.080 1.503 1.248 1.003 0.950 P093A 6/7 BUV298AV Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7

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BUV298AV_01

1. 物料型号： - 型号：BUV298AV

2. 器件简介： - BUV298AV是一款NPN晶体管功率模块，具有高电流、超低Rth结壳热阻、绝缘外壳（2500V RMS）、易于安装、低内部寄生电感等特点。适用于工业应用，如电机控制、SMPS（开关电源）、UPS（不间断电源）和焊接设备。

3. 引脚分配： - Pin 4未连接。

4. 参数特性： - 绝对最大额定值： - VCEV：1000V - VcEO(sus)：450V - VEBO：7V - Ic：50A - ICM：75A - IB：10A - IBM：16A - Ptot：250W - Tstg：-55至150°C - TJ：150°C - VIso：2500V AC-RMS - 热阻： - Rthj-case：最大0.5°C/W - Rthc-h：最大0.05°C/W

5. 功能详解： - 电气特性（Tcase=25°C）： - ICER：0.4 mA - ICEV：0.4 mA - IEBO：2 mA - VCEO(sus)：450V - hFE：12 - VCE(sat)：0.35V至1.2V - VBE(sat)：1V至1.5V - dic/dt：160至210 A/μs - Vce(3 s)：4.5V至8V - Vce(5 us)：2.5V至4V - ts、tf、tc：2.2s、0.2s、0.45s

6. 应用信息： - 适用于高电流功率应用特别是在，需要低热阻和高绝缘电压的场合。

7. 封装信息： - 提供了详细的机械尺寸数据，包括最小、典型和最大尺寸，单位为毫米和英寸。

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