BUV42

BUV42 SILICON NPN SWITCHING TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE FAST SWITCHING TIMES LOW SWITCHING LOSSES VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION n n n 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CEV V CEO V EBO IC I CM IB I BM P Bas e P tot T s tg Tj Parameter Collector-emitter Voltage (VBE = -1.5V) Collector-emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Reverse Bias Base Dissipation (B. E. junction in avalanche) o T otal Dissipation at Tc ase ≤ 25 C Storage Temperature Max Operating Junction Temperature Valu e 350 250 7 12 18 2.5 4 1 120 -65 to 200 200 Unit V V V A A A A A W o o C C October 1995 1/5 BUV42 THERMAL DATA R thj -ca se Thermal Resistance Junction-case Max 1.46 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 10 Ω) Collector Cut-off Current Emitter Cut- off Current (I C = 0) T est Con ditio ns V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0.2A L = 25 mH I E = 50 mA IC IC IC IC IC IC IC IC IC IC = = = = = = = = = = 2A 4A 6A 2A 4A 6A 4A 6A 4A 6A IB IB IB IB IB IB IB IB IB IB = = = = = = = = = = 0.13A 0.4A 0.75A 0.13A 0.4A 0.75A 0.4A 0.75A 0.4A 0.75A 250 7 0.25 0.4 0.5 0.25 0.45 0.6 1 1.1 0.9 1.1 25 20 40 35 1.7 2.5 0.9 1.1 2.5 4 1.7 2 0.8 0.9 1.2 0.9 1.2 1.5 1.3 1.5 1.3 1.5 Tc = 100o C V BE = -1.5V o V BE = - 1.5V T C=100 C Min . T yp. Max. 0.5 2.5 0.5 2 1 Unit mA mA mA mA mA V V V V V V V V V V V V A/ µ s A/ µ s V V V V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V EB0 V CE(sat) ∗ Emitter-base Voltage (Ic = 0) Collector-Emitter Saturation Voltage T j = 100 C o Tj = 100 C o T j = 100 C o V BE(sat )∗ Base-Emitter Saturation Voltage Tj = 100 C T j = 100 o C IB1 = 0.6A o T j = 25 C T j = 100 o C I B1 = 0.4A Tj = 25o C o T j = 100 C I B1 = 0.4A T j = 25 oC o T j = 100 C o di c /dt ∗ Rated of Rise of on-state Collector Current Collector Emitter Dynamic Voltage Collector Emitter Dynamic Voltage V CC = 200V RC = 0 V CE(2 µ s ) V CC = 200V R C = 50Ω VCC = 200V R C = 50Ω V CE(4 µ s ) ∗ Pulsed: Pulse duration = 300 µs, duty cycle = 2 % 2/5 BUV42 ELECTRICAL CHARACTERISTICS (continued) Symbo l tr ts tf Parameter RESISTIVE LOAD Rise Time Storage Time Fall Time INDUCT IVE LOAD Storage Time Fall Time Tail Time in Turn-on Crossover Time Storage Time Fall Time Tail Time in Turn-on Crossover Time Storage Time Fall Time Tail Time in Turn-on Storage Time Fall Time Tail Time in Turn-on T est Con ditio ns V CC = 200V V BB = -5V R B2 = 3.3Ω I C = 6A IB1 = 0.75A T p = 30µ s Min . T yp. 0.3 1 0.15 Max. 0.4 1.6 0.3 Unit µs µs µs ts tf tt tc ts tf tt tc ts tf tt ts tf tt V CC = 200V I CC = 4A V BB = -5V LC = 2.5mH VCC = 200V I CC = 4A V BB = -5V LC = 2.5mH V CC = 200V I CC = 4A V BB = 0 L C = 2.5mH V CC = 200V I CC = 4A V BB = 0 L C = 2.5mH V c la mp = 250V IB = 0.4A R B2 = 6.3 Ω Vc la mp = 250V IB = 0.4A R B2 = 6.3 Ω T j = 100o C V c la mp = 250V IB = 0.5A R B2 = 7.5 Ω V c la mp = 250V IB = 0.4A R B2 = 7.5 Ω T j = 100o C 1.2 0.08 0.03 0.15 1.8 0.2 0.08 0.4 2.5 0.4 0.15 4.8 0.7 0.4 1.8 0.2 0.12 0.35 2.4 0.4 0.2 0.7 µs µs µs µs µs µs µs µs µs µs µs µs µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle = 2 % 3/5 BUV42 TO-3 (H) MECHANICAL DATA mm MIN. A B C D E G N P R U V 30.10 3.88 10.9 16.9 26.2 4.09 39.50 1.185 0.152 0.96 TYP. 11.7 1.10 1.70 8.7 20.0 0.429 0.665 1.031 0.161 1.555 0.037 MAX. MIN. inch TYP. 0.460 0.043 0.066 0.342 0.787 MAX. DIM. P G A D C U V O N R B P003N 4/5 E BUV42 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany- Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .. . 5/5