BUV46A

® BUV46 BUV46A HIGH VOLTAGE NPN SILICON POWER TRANSISTORS s s s s s STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTORS HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION FAST SWITCHING SPEED 3 1 2 APPLICATIONS GENERAL PURPOSE SWITCHING s SWITCH MODE POWER SUPPLIES s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s TO-220 DESCRIPTION The devices are silicon Multiepitaxial Mesa NPN transistors in the Jedec TO-220 plastic package intended for high voltage, fast switching applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEX V CEO V EBO IC IB P tot T stg Tj Parameter BUV46 Collector-Emitter Voltage (V BE = 0 ) Collector-Emitter Voltage (V BE = - 2.5V) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Base Current Total Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature o Value BUV46A 1000 1000 450 7 5 3 70 -65 to 150 150 850 850 400 Unit V V V V A A W o o C C January 1999 1/4 BUV46 / BUV46A THERMAL DATA R thj-case Thermal Resistance Junction-Case Max 1.76 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 1 0 Ω ) Collector Cut-off Current Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = V CEX V CE = V CEX T C = 1 25 o C Min. Typ. Max. 0.1 1 0.3 2 1 for B UV46 f or B UV46A I B = 0 .5 A I B = 0 .7 A I B = 0 .4 A I B = 0 .6 A I B = 0 .5 A I B = 0 .4 A V CC = 1 50 V 400 450 1.5 5 1.5 5 1.3 1.3 1 3 0.8 1 3 0.8 Unit mA mA mA mA V V V V V V V V µs µs µs µs µs µs V CE = V CEX V BE = -2.5 V V CE = V CEX VBE = - 2.5 V T C = 1 25 o C V BE = 7 V I C = 1 00 mA for B UV46 I C = 2 .5 A I C = 3 .5 A for B UV46A IC = 2 A IC = 3 A for B UV46 I C = 2 .5 A for B UV46A IC = 2 A for B UV46 I C = 2 .5 A I B1 = - I B2 = 0 .5 A for B UV46A IC = 2 A I B1 = - I B2 = 0 .4 A V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ Collector-Emitter Saturation Voltage V BE(sat) ∗ Base-Emitter Saturation Voltage t on ts tf t on ts tf RESISTIVE LOAD Turn-on Time Storage Time Fall Time RESISTIVE LOAD Turn-on Time Storage Time Fall Time V CC = 1 50 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 BUV46 / BUV46A TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 3/4 BUV46 / BUV46A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 4/4