BUX10

BUX10 HIGH POWER NPN SILICON TRANSISTOR s s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS MOTOR CONTROL s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1 2 TO-3 DESCRIPTION The BUX10 is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEX V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-base Voltage (I E = 0 ) Collector-emitter Voltage (V BE = - 1 .5V) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (Ic = 0) Collector Current Collector Peak Current (t P = 10 ms) Base Current Total Power Dissipation at T case Storage Temperature Max Operating Junction Temperature ≤ 25 oC Value 160 160 125 7 25 30 5 150 -65 to 200 200 Unit V V V V A A A W o o C C July 1997 1/4 BUX10 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.17 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEO I CEX Parameter Collector Cut-off Current (I B = 0 ) Collector Cut-off Current Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = 1 00 V V CE = 1 60 V T case = 125 o C V CE = 160 V V EB = 5 V I C = 2 00 mA I E = 5 0 mA IC = 10 A IC = 20 A IC = 20 A IC = 10 A IC = 20 A V CE = 3 0 V V CE = 4 8 V IC = 1 A f = 10MHz IC = 20 A V CC = 30V IC = 20 A V CC = 30V V clamp =125 V L = 500 µ H IB = 1 A IB = 2 A IB = 2 A V CE = 2 V V CE = 4 V t=1s t=1s V CE = 15 V I B1 = 2 A I B1 = - I B2 = 2A 20 20 10 5 1 8 0.5 0.6 0.15 1.5 1.2 0.3 125 7 0.3 0.7 1.6 0.6 1.2 2 60 A A MHz µs µs µs A V BE = - 1.5V V BE = - 1.5V Min. Typ. Max. 1.5 1.5 6 1 Unit mA mA mA mA V V V V V I EBO V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V EBO V CE(sat) ∗ V BE(sat) ∗ h FE I S/b fT t on ts tf Emitter-Base Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Second Breakdown Collector Current Transistor Frequency Turn-on Time Storage Time Fall Time Clamped E s/b Collector Current ∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2 % 2/4 BUX10 TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 3/4 E BUX10 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4