BUX80

BUX80 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS SWITCHING REGULATORS s MOTOR CONTROL s HIGH FREQUENCY AND EFFICENCY CONVERTERS s 1 2 TO-3 DESCRIPTION The BUX80 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case, particularly intended for converters, inverters, switching regulators and motors control system applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CER V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (R BE = 5 0Ω ) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (Ic = 0) Collector Current Collector Peak Current Base Current Total Power Dissipation at T case Storage Temperature Max Operating Junction Temperature ≤ 40 C o Value 800 500 400 10 10 15 5 100 -65 to 150 150 Unit V V V V A A A W o o C C June 1997 1/4 BUX80 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.1 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = 8 00 V V CE = 8 00 V V BE = 1 0 V I C = 1 00 mA 400 T case = 1 25 C o Min. Typ. Max. 1 3 10 Unit mA mA mA V V CEO(sus) ∗ Collector-Emitter SustainingVoltage (I B = 0) V CER(sus) ∗ Collector-Emitter Sustaining Voltage (R BE = 5 0 Ω ) V CE(sat) ∗ V BE(sat) ∗ h FE ∗ t on ts tf Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Turn-on Time Storage Time Fall Time I C = 1 00 mA 500 V IC = 5 A IC = 8 A IC = 5 A IC = 8 A I C = 1 .2 A IC = 5 A V CC = 250 V IC = 5 A I B2 = - 2 A IC = 5 A I B2 = - 2 A IB = 1 A I B = 2 .5 A IB = 1 A I B = 2 .5 A V CE = 5 V I B1 = 1 A I B1 = 1 A V CC = 250 V I B1 = 1 A V CC = - 250 V 30 1.5 3 1.4 1.8 V V V V 0.5 3.5 0.5 µs µs µs ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % 2/4 BUX80 TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 3/4 E BUX80 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4