BUX98APW

® BUX98APW HIGH VOLTAGE NPN POWER TRANSISTOR s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS HIGH FREQUENCY AND EFFICENCY CONVERTERS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 3 2 1 TO-247 DESCRIPTION The BUX98APW is a silicon Multiepitaxial Mesa NPN transistor in TO-247 plastic package. It is intended for use in industrial applications from single and three-phase mains operation. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CER V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (R BE = ≤ 1 0 Ω ) Collector-Base Voltage (V BE = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 m s) Total Power Dissipation at T case < 2 5 o C Storage Temperature Max Operating Junction Temperature Value 1000 1000 450 7 24 36 5 8 200 -65 to 150 150 Unit V V V V A A A A W o o C C February 2002 1/4 BUX98APW THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.63 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CES I CEO IEBO V(BR)EBO Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current (V BE = 0 ) Collector Cut-off Current (I B = 0 ) Emitter Cut-off Current (I C = 0 ) Emitter-Base Breakdown Voltage (I C = 0 ) Test Conditions V CE = 1 000 V V CE = 1 000 V V CE = 1 000 V V CE = 1 000 V V CE = 4 50 V V EB = 5 V I E = 1 00 mA 7 T C = 1 25 o C T C = 1 25 o C Min. Typ. Max. 200 2 200 2 2 2 Unit µA mA µA mA mA mA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) VCE(sat) ∗ V BE(sat) ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage RESISTIVE LOAD Turn-on Time Storage Time Fall Time I C = 2 00 mA L = 25 mH 450 V IC = 16 A IC = 16 A V CC = 1 50 V I B1 = - I B2 = 3 .2 A I B = 3 .2 A I B = 3 .2 A IC = 1 6 A 1.2 1.5 V V t on ts tf 1 3 0.8 µs µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 % 2/4 BUX98APW TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M 2 15.3 19.7 14.2 34.6 5.5 3 0.079 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 3/4 BUX98APW Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4