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BUXD87

BUXD87

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    BUXD87 - HIGH VOLTAGE NPN POWER TRANSISTOR - STMicroelectronics

  • 数据手册
  • 价格&库存
BUXD87 数据手册
® BUXD87 HIGH VOLTAGE NPN POWER TRANSISTOR s s s s s REVERSE PINS OUT Vs STANDARD IPAK/DPAK PACKAGE HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") IPAK TO-251 (Suffix "-1") 3 2 1 1 3 APPLICATIONS: SWITCH MODE POWER SUPPLIES s GENERAL PURPOSE SWITCHING s DPAK TO-252 (Suffix "T4") DESCRIPTION The BUXD87 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = - 1.5V) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p < 5 m s) Base Current Base Peak Current (t p < 5 m s) Total Dissipation at T c = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 1000 450 5 0.5 1 0.3 0.6 20 -65 to 150 150 Unit V V V A A A A W o o C C April 1999 1/6 BUXD87 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 6.25 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I EBO VCEO(sus) V BEO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ fT ts tf Parameter Collector Cut-off Current (V BE = - 1.5V) Emitter Cut-off Current (I C = 0 ) Collector-Emitter Sustaining Voltage Collector-Base Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency RESISTIVE LOAD Storage Time Fall Time Test Conditions V CE = 1 000 V V CE = 1 000 V V EB = 5 V I C = 1 00 mA I C = 1 0 mA I C = 0 .1 A I C = 0 .2 A I C = 0 .2 A I C = 5 0 mA I C = 4 0 mA I C = 5 0 mA V CC = 2 50 V I B1 = 4 0 mA tp = 20 µs IB = 0 .01 A IB = 0 .02 A IB = 0 .02 A VCE = 5 V VCE = 5 V VCE = 1 0 V f=1MHz I C = 2 00 mA I B2 = -80 mA 50 12 20 4.5 0.5 MHz µs µs 450 5 0.8 1 1 T j = 1 25 o C Min. Typ. Max. 100 1 1 Unit µA mA mA V V V V V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Derating Curves 2/6 BUXD87 DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Reverse Biased SOA 3/6 BUXD87 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 0.45 0.48 6.00 6.40 4.40 15.90 9.00 0.80 0.80 10o 0.30 0.95 0.60 0.60 6.20 6.60 4.60 16.30 9.40 1.20 1.00 0.018 0.019 0.237 0.252 0.173 0.626 0.354 0.031 0.031 10o 2.20 0.90 0.70 0.64 5.20 mm TYP. MAX. 2.40 1.10 1.30 0.90 5.40 0.85 0.012 0.037 0.024 0.024 0.244 0.260 0.181 0.642 0.370 0.047 0.039 MIN. 0.087 0.035 0.028 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.035 0.213 0.033 P032N_E 4/6 BUXD87 TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 5/6 BUXD87 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 6/6
BUXD87 价格&库存

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