BUY49S

BUY49S SILICON NPN TRANSISTOR s s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION s APPLICATIONS GENERAL PURPOSE SWITCHING DESCRIPTION The BUY49S is a silicon epitaxial planar NPN transistor in jedec TO-39 package. It is used in high-current switching applications up to 3 A. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj June 1997 Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Total Power Dissipation at T amb ≤ 2 5 o C Storage Temperature Max Operating Junction Temperature Value 250 200 6 3 5 10 - 65 to 200 200 Unit V V V A A W o o C C 1/4 BUY49S THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-case-ambient o Max Max 15 175 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 Symbol I CBO Parameter Collector Cut-off Current (I E = 0 ) C unless otherwise specified) Min. Typ. Max. 0.1 50 250 Unit µA µA V Test Conditions V CB = 2 00 V V CB = 2 00 V I C = 1 00 µ A T case = 150 o C V(BR)CBO * Collector-Base Breakdown Voltage (I E = 0 ) VCEO(sus) * Collector-Emitter Sustaining Voltage (I B = 0) V EBO * V CE(sat) * Emitter-base Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage DC Current Gain I C = 2 0 mA 200 V IE = 1 mA I C = 0 .5 A I B = 5 0 mA 6 0.2 V V V BE(sat) * I C = 0 .5 A I B = 5 0 mA 1.1 V h FE * I C = 2 0 mA I C = 0 .5 A I C = 2 0 mA T case = - 5 5 o C I C = 1 00 mA IE = 0 f = 1 M Hz I C = 0 .5 A I B1 = - I B2 = 5 0 mA V CE = 50 V V CE = 5 V V CE = 5 V V CE = 2 V V CE = 1 0 V V CB = 10 V V CC = 2 0 V 40 40 16 50 80 fT C CBO t on t off Is/b ** Transistor Frequency Collector-base Capacitance Turn-on Time Turn-off Time Second Breakdown Collector Current MHz 30 0.3 1 pF µs µs A 0.2 ∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 % ∗∗ Pulsed: 1 s, non repetitive pulse. 2/4 BUY49S TO-39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch G I H D A L F E B P008B 3/4 BUY49S Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4