BUY69A_03

® BUY69A HIGH VOLTAGE NPN SILICON TRANSISTOR s s s s s s STM PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH POWER TO-3 PACKAGE APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV s SWITCHING REGULATORS s 1 2 TO-3 DESCRIPTION The BUY69A is a silicon Multi-Epitaxial mesa NPN transistor in Jedec TO-3 metal case. It is intended for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (tp ≤ 1 0 ms ) Base Current Total Dissipation at T c ≤ 2 5 C Storage Temperature Max. Operating Junction Temperature o Value 1000 400 8 10 15 3 100 -65 to 200 200 Unit V V V A A A W o o C C October 2003 1/4 BUY69A THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.75 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO VCEO(sus) Parameter Collector Cut-off Current (V BE = 0 ) Emitter Cut-off Current (I C = 0 ) Collector-Emitter Sustaining Voltage (I B = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Second Breakdown Collector Current Turn on Time t on ts ts tf Storage Time Fall Time Fall Time Test Conditions V CE = 1 000 V V EB = 8 V I C = 1 00 mA 400 Min. Typ. Max. 1 1 Unit mA mA V V CE(sat) ∗ V BE(sat) ∗ h FE ∗ fT Is/b ** IC = 8 A IC = 8 A I C = 2 .5 A I C = 0 .5 A V CE = 25 V IC = 5 A I B1 = 1 A IC = 5 A I B1 = - I B2 = 1 A IC = 8 A I B1 = - I B2 = 2 .5 A I B = 2 .5 A I B = 2 .5 A V CE = 1 0 V V CE = 1 0 V 4 V CE = 250 V 0.2 V CE = 250 V V CE = 40 V 15 10 3.3 2.2 V V MHz A µs 1.7 0.3 1 µs µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ∗∗ Pulsed: 1s, non repetitive pulse. 2/4 BUY69A TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 3/4 E BUY69A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4