BUZ10

BUZ10 ® N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET MOSFET TYPE BUZ10 ■ ■ ■ ■ ■ V DSS R DS(on) ID 50 V < 0.07 Ω 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ) s ( ct c u d TO-220 e t le 2 ) s t( o r P INTERNAL SCHEMATIC DIAGRAM o s b O - u d o r P e ABSOLUTE MAXIMUM RATINGS t e l o Symbol V DS s b O V DGR V GS ID Value Unit Drain-source Voltage (V GS = 0) Parameter 50 V Drain- gate Voltage (R GS = 20 kΩ) 50 V ± 20 V Gate-source Voltage o Drain Current (continuous) at T c = 25 C 23 A IDM Drain Current (pulsed) 92 A P tot Total Dissipation at T c = 25 o C 75 Tstg Tj Storage Temperature Max. Operating Junction Temperature DIN HUMIDITY CATEGORY (DIN 40040) IEC CLIMATIC CATEGORY (DIN IEC 68-1) W -65 to 175 o C 175 o C E 55/150/56 First digit of the datecode being Z or K identifies silicon characterized in this datasheet. February 2000 1/8 BUZ10 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 2.0 62.5 o C/W C/W AVALANCHE CHARACTERISTICS Symbol Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Parameter 10 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 30 V) 150 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA Min. V GS = 0 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (V DS = 0) T j = 125 o C Typ. Max. Unit b O - 3 4 V 0.06 0.07 Ω Test Conditions Min. Typ. Max. Unit 6 11 S 900 130 40 pF pF pF Static Drain-source On Resistance I D = 14 A V GS = 10V ) s ( ct C iss C oss C rss u d o Forward Transconductance V DS = 25 V I D = 14 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz r P e V GS = 0 t e l o s b O µA µA 2.1 R DS(on) Parameter 1 10 Min. r P e t le so Test Conditions I D = 1 mA g fs (∗) uc nA Gate Threshold Voltage V DS = V GS Symbol ) s t( V ± 100 V GS(th) DYNAMIC Unit od V GS = ± 20 V Parameter Max. 50 ON (∗) Symbol Typ. SWITCHING Symbol t d(on) tr t d(of f) tf 2/8 Parameter Turn-on Time Rise Time Turn-off Delay Time Fall Time Test Conditions V DD = 30 V R GS = 4.7 Ω I D = 10 A V GS = 10 V Min. Typ. 20 45 48 10 Max. Unit ns ns ns ns BUZ10 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symbol Parameter Test Conditions I SDM Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 46 A Reverse Recovery Time Reverse Recovery Charge I SD = 23 A di/dt = 100 A/µs V DD = 30 V T j = 150 o C ISD t rr Q rr Min. Typ. V GS = 0 Max. Unit 23 92 A A 1.9 V 50 ns 0.17 µC (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % c u d e t le ) s ( ct r P e u d o Safe Operating Area ) s t( o r P o s b O - Thermal Impedance t e l o s b O 3/8 BUZ10 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance c u d e t le ) s ( ct u d o r P e Gate Charge vs Gate-source Voltage t e l o s b O 4/8 o r P o s b O - Capacitance Variations ) s t( BUZ10 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 5/8 BUZ10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit c u d e t le ) s ( ct u d o r P e Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times t e l o s b O 6/8 o s b O - o r P ) s t( BUZ10 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 G1 2.4 2.7 0.094 H2 10.0 10.40 0.393 14.0 0.511 L2 0.203 16.4 L4 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 L7 6.2 6.6 0.244 L9 3.5 3.93 0.137 DIA. 3.75 3.85 so 0.551 0.116 0.620 0.260 0.154 b O - 0.151 E 0.147 D1 C ) s ( ct e t le o r P 0.409 D A c u d 0.645 13.0 ) s t( 0.106 u d o L2 t e l o G G1 s b O H2 F1 r P e F2 F Dia. L5 L9 L7 L6 L4 P011C 7/8 BUZ10 c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. 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