BYT08P-400

® BYT08P-400 BYT08PI-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) trr (max) FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: TO-220AC Insulation voltage: 2500 VRMS Capacitance = 7 pF DESCRIPTION This single rectifier is suited for Switch Mode Power Supplies and other power converters. This device is intended to free-wheeling function in converters and motor control circuits. ABSOLUTE RATINGS (limiting values) Symbol VRRM IFRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage Repetitive peak forward current RMS forward current Average forward current TO-220AC Insulated TO-220AC IFSM Tstg Tj Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 120°C δ = 0.5 Tc = 105°C 100 - 40 to + 150 150 A °C °C tp=5 µs F=5kHz Value 400 200 16 8 Unit V A A A 8A 400 V 1.4 V 35 ns A K A K T0-220AC (Plastic) Insulated TO-220AC (Plastic) tp = 10 ms Sinusoidal October 1999 - Ed: 3A 1/7 BYT08P-400 / BYT08PI-400 THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case TO-220AC Ins. TO-220AC Value 2.5 3.5 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol VF * IR ** Parameter Forward voltage drop Reverse leakage current Test Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C VR = VRRM IF = 8 A Min. Typ. Max. 1.5 1.4 15 2.5 µA mA Unit V Pulse test : * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the conduction losses use the following equation: P = 1.1 x IF(AV) + 0.024 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25°C IF = 1A VR = 30V dIF/dt = - 15A/µs IF = 0.5A IR = 1A Irr = 0.25A TURN-OFF SWITCHING CHARACTERISTICS Symbol tIRM IRM Parameter Maximum reverse recovery time Maximum reverse recovery current Turn-off overvoltage coefficient Test Conditions dIF/dt = - 32 A/µs dIF/dt = - 64 A/µs dIF/dt = - 32 A/µs dIF/dt = - 64 A/µs VCC = 200 V IF = 8 A Lp ≤ 0.05 µH Tj = 100°C (see fig. 13) Min. Typ. Max. Unit 75 ns 50 2.2 2.8 3.3 / A Min. Typ. Max. 75 35 Unit ns C= VRP VCC Tj = 100°C VCC = 60V IF = IF(AV) dIF/dt = - 30A/µs Lp = 1µH 2/7 BYT08P-400 / BYT08PI-400 Fig. 1: Average forward power dissipation versus average forward current . PF(av)(W) 14 12 10 8 6 4 2 0 0 1 2 3 4 IF(av) (A) 5 6 7 δ=tp/T T Fig. 2: Peak current versus form factor. IM(A) δ = 0.1 δ = 0.05 δ=1 δ = 0.2 δ = 0.5 tp 8 9 10 100 90 80 70 60 50 40 30 20 10 0 0.0 P=5W T δ=tp/T tp P=10W P=20W 0.1 0.2 0.3 0.4 δ 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 3: Average forward current versus ambient temperature (δ=0.5). IF(av)(A) 10 9 8 7 6 5 4 3 2 1 0 Rth(j-a)=Rth(j-c) Non insulated Insulated Rth(j-a)=15°C/W T δ=tp/T tp Tamb(°C) 50 75 100 125 150 0 25 Fig. 4-1: Non repetitive surge peak forward current versus overload duration (TO-220AC). Fig. 4-2: Non repetitive surge peak forward current versus overload duration (insulated TO-220AC). IM(A) 100 90 80 70 60 50 40 30 IM 20 10 0 1E-3 IM(A) 90 80 70 60 50 40 30 20 10 0 1E-3 Tc=25°C Tc=50°C Tc=50°C Tc=25°C Tc=75°C t IM t Tc=75°C δ=0.5 δ=0.5 t(s) 1E-2 1E-1 1E+0 t(s) 1E-2 1E-1 1E+0 3/7 BYT08P-400 / BYT08PI-400 Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 6: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 100.0 Typical values Tj=100°C K=[Zth(j-c)/Rth(j-c)] 1.0 0.5 δ = 0.5 10.0 δ = 0.2 Tj=25°C δ = 0.1 0.2 Single pulse T 1.0 Tj=100°C tp(s) 0.1 1E-3 1E-2 1E-1 δ=tp/T tp VFM(V) 1E+0 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 30 28 26 24 22 20 18 16 14 12 10 Fig. 8: Recovery charges versus dIF/dt (per diode). Qrr(nC) 250 F=1MHz Tj=25°C IF=IF(av) 90% confidence Tj=100°C 200 150 100 50 VR(V) 1 10 100 200 0 10 20 dIF/dt(A/µs) 50 100 200 Fig. 9: Recovery current versus dIF/dt (per diode). Fig. 10: Transient peak forward voltage versus dIF/dt (per diode) VFP(V) 30 IF=IF(av) 90% confidence Tj=100°C IRM(A) 10 8 6 4 2 dIF/dt(A/µs) IF=IF(av) 90% confidence Tj=100°C 25 20 15 10 5 dIF/dt(A/µs) 0 10 20 50 100 200 0 0 100 200 300 400 500 4/7 BYT08P-400 / BYT08PI-400 Fig. 11: Forward recovery time versus dIF/dt (per diode) Fig. 12: Dynamic parameters versus junction temperature. tfr(µs) 1.50 1.25 1.00 0.75 0.50 0.25 dIF/dt(A/µs) IF=IF(av) 90% confidence Tj=100°C Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C] 1.50 1.25 1.00 0.75 0.50 IRM Qrr Tj(°C) 0.00 0 100 200 300 400 500 0.25 0 25 50 75 100 125 150 Fig. 13: Turn-off switching characteristics (without series inductance). Fig. 14: Turn-off switching characteristics (with series inductance). 5/7 BYT08P-400 / BYT08PI-400 PACKAGE MECHANICAL DATA TO-220AC DIMENSIONS REF. H2 C L5 ØI L6 L2 D L7 A Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 4.95 5.15 10.00 10.40 16.40 typ. 13.00 14.00 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.194 0.202 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 L9 F1 L4 F G M E A C D E F F1 G H2 L2 L4 L5 L6 L7 L9 M Diam. I 6/7 BYT08P-400 / BYT08PI-400 PACKAGE MECHANICAL DATA TO-220AC Insulated B I L b2 C DIMENSIONS REF. Millimeters Min. 14.23 12.70 10.20 0.64 1.15 4.48 0.35 2.10 4.58 5.85 3.55 2.54 1.45 Max. 15.87 4.50 14.70 10.45 0.96 1.39 4.82 0.65 2.70 5.58 6.85 4.00 3.00 1.75 Inches Min. 0.560 0.500 0.402 0.025 0.045 0.176 0.020 0.083 0.180 0.230 0.140 0.100 0.057 Max. 0.625 0.177 0.579 0.411 0.038 0.055 0.190 0.026 0.106 0.220 0.270 0.157 0.118 0.069 F A a1 l2 a2 b1 c1 e c2 A a1 a2 B b1 b2 C c1 c2 e F I L l2 Ordering type BYT08P-400 BYT08PI-400 Marking BYT08P-400 BYT08PI-400 Package TO-220AC Insulated TO-220AC Weight 1.86 g. 1.86 g. Base qty 50 50 Delivery mode Tube Tube Cooling method: by conduction (C) Recommended torque value: 0.8 N.m. Maximum torque value: 1.0 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7