BYT 11-600 →1000
FAST RECOVERY RECTIFIER DIODES
SOFT RECOVERY VERY HIGH VOLTAGE SMALL RECOVERY CHARGE
APPLICATIONS ANTISATURATION DIODES FOR TRANSISTOR BASE DRIVE SNUBBER DIODES ABSOLUTE RATINGS (limiting values)
Symbol IFRM IF (AV) IFSM Ptot Tstg Tj TL Parameter Repetive Peak Forward Current Average Forward Current * Surge non Repetitive Forward Current Power Dissipation * Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case tp ≤ 20µs Ta = 75°C δ = 0.5 tp = 10ms Sinusoidal Ta = 55°C
F 126 (Plastic)
Value 20 1 35 1.25 - 55 to + 150 - 55 to + 150 230
Unit A A A W °C
°C
Symbol VRRM
Parameter 600 Repetitive Peak Reverse Voltage 600
BYT 11800 800 1000 1000
Unit V
THERMAL RESISTANCE
Symbol Rth (j - a) Junction-ambient* Parameter Value 60 Unit °C/W
* On infinite heatsink with 10mm lead length.
November 1994
1/4
BYT11-600 → 1000
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
Synbol IR VF Tj = 25°C Tj = 25°C Test Conditions VR = VRRM IF = 1A Min. Typ. Max. 20 1.3 Unit µA V
RECOVERY CHARACTERISTICS
Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A Irr = 0.25A Min. Typ. Max. 100 Unit ns
To evaluate the conduction losses use the following equations: VF = 1.1 + 0.075 IF P = 1.1 x IF(AV) + 0.075 IF2(RMS)
F i gu re 1. Ma xi mu m av era ge power dissipation versus average forward current.
Figure 2. Average forward current versus ambient temperature.
Figure 3. Thermal resistance versus lead length.
Mounting n°1 INFINITE HEATSINK
Mounting n°2 PRINTED CIRCUIT
Test point of tlead
Soldering
2/4
BYT 11-600 → 1000
Figure 5. Peak forward current versus peak forward voltage drop (maximum values).
F igure 4. Transient thermal impedance junction-ambient for mounting n°2 versus pulse duration (L = 10 mm).
Figure 6. Capacitance versus reverse applied voltage
Figure 7. Non repetitive surge peak current versus number of cycles
3/4
BYT11-600 → 1000
PACKAGE MECHANICAL DATA F 126 (Plastic)
B note 1 E
A
B E note 1
/ OC
/ OD
note 2
OD /
DIMENSIONS REF. A B ∅C ∅D E Millimeters Min. 6.05 26 2.95 0.76 3.05 0.86 1.27 Max. 6.35 Inches Min. 0.238 1.024 0.116 0.029 0.120 0.034 0.050 Max. 0.250 NOTES
1 - The lead diameter ∅ D is not controlled over zone E 2 - The minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59"(15 mm)
Cooling method: by convection (method A) Marking: type number ring at cathode end Weight: 0.4g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
© 1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - United Kingdom - U.S.A. 4/4
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